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Single P-channel Enhancement-Mode MOSFET

Qty Price
1-9 $1.86
10-24 $1.67
25-99 $1.55
100-249 $1.35
250-499 $1.25
500-749 $1.05
750-999 $0.86
1000+ $0.79


  • Low rDS(on) . . . 0.09 Typ at VGS = -10 V
  • 3 V Compatible
  • Requires No External VCC
  • TTL and CMOS Compatible Inputs
  • VGS(th) = -1.5 V Max
  • Available in Ultrathin TSSOP Package (PW)
  • ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015

Texas Instruments  TPS1101PWR

The TPS1101 is a single, low-rDS(on), P-channel, enhancement-mode MOSFET. The device has been optimized for 3-V or 5-V power distribution in battery-powered systems by means of the Texas Instruments LinBiCMOSTM

process. With a maximum VGS(th) of -1.5 V and an IDSS of only 0.5 uA, the TPS1101 is the ideal high-side switch for low-voltage, portable battery-management systems where maximizing battery life is a primary concern. The low rDS(on) and excellent ac characteristics (rise time 5.5 ns typical) of the TPS1101 make it the logical choice for low-voltage switching applications such as power switches for pulse-width-modulated (PWM) controllers or motor/bridge drivers.

The ultrathin thin shrink small-outline package or TSSOP (PW) version fits in height-restricted places where other P-channel MOSFETs cannot. The size advantage is especially important where board height restrictions do not allow for an small-outline integrated circuit (SOIC) package. Such applications include notebook computers, personal digital assistants (PDAs), cellular telephones, and PCMCIA cards. For existing designs, the D-packaged version has a pinout common with other P-channel MOSFETs in SOIC packages.