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Automotive 4.5V to 8V, 4A Synchronous MOSFET Driver


Package | PIN: DRB | 8
Temp: S (-40 to 105)
Carrier: Cut Tape
Qty Price
1-9 $1.65
10-24 $1.48
25-99 $1.37
100-249 $1.19
250-499 $1.10
500-749 $0.92
750-999 $0.76
1000+ $0.70


  • Qualified for Automotive Applications
  • Drives Two N-Channel MOSFETs With 14-ns Adaptive Dead Time
  • Wide Gate Drive Voltage: 4.5 V Up to 8.8 V With Best Efficiency at 7 V to 8 V
  • Wide Power System Train Input Voltage: 3 V Up to 27 V
  • Wide Input PWM Signals: 2 V Up to 13.2-V Amplitude
  • Capable of Driving MOSFETs With ≥40-A Current per Phase
  • High Frequency Operation: 14-ns Propagation Delay and 10-ns Rise or Fall Time Allows FSW up to 2 MHz
  • Capable of Propagating <30-ns Input PWM Pulses
  • Low-Side Driver Sink On-Resistance (0.4 Ω) Prevents dV/dT Related Shoot-Through Current
  • 3-State PWM Input for Power Stage Shutdown
  • Space Saving Enable (input) and Power Good (output) Signals on Same Pin
  • Thermal Shutdown
  • UVLO Protection
  • Internal Bootstrap Diode
  • Economical SOIC-8 and Thermally Enhanced 3-mm × 3-mm VSON-8 Packages
  • High Performance Replacement for Popular 3-State Input Drivers

Texas Instruments  TPS28225TDRBRQ1

The TPS28225-Q1 is a high-speed driver for N-channel complementary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current, single and multi-phase DC-to-DC converters. The TPS28225-Q1 is highly efficient, has a small solution size and low-EMI emissions.

The TPS28225-Q1 device offers high performance features such as a 8.8-V gate drive voltage, 14-ns adaptive dead-time control, 14-ns propagation delays and high-current 2-A source and 4-A sink drive capabilities. The 0.4-Ω impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor is charged by an internal diode which allows the use of an N-channel MOSFETs in a half-bridge configuration.

The TPS28225-Q1 is offered in an economical SOIC-8 package and in a thermally enhanced small sized VSON package. The driver is specified to operate in the temperature range of –40°C to 105°C with the absolute maximum junction temperature of 150°C.