TPS53317RGBT

text.skipToContent text.skipToNavigation

TPS53317RGBT

Low Input Voltage, 6A Synchronous Step-Down SWIFT™ Converter for DDR Memory Termination

Packaging

Package | PIN: RGB | 20
Temp: I (-40 to 85)
Carrier: Cut Tape
Qty Price
1-9 $5.76
10-24 $5.18
25-99 $4.84
100-249 $4.34
250-499 $4.05
500-749 $3.53
750-999 $3.05
1000+ $2.99

Features

  • TI proprietary Integrated MOSFET and Packaging Technology
  • Supports DDR Memory Termination with up to 6-A Continuous Output Source or Sink Current
  • External Tracking
  • Minimum External Components Count
  • to 6-V Conversion Voltage
  • D-CAP+ Mode Architecture
  • Supports All MLCC Output Capacitors and SP/POSCAP
  • Selectable SKIP Mode or Forced CCM
  • Optimized Efficiency at Light and Heavy Loads
  • Selectable 600-kHz or 1-MHz Switching Frequency
  • Selectable Overcurrent Limit (OCL)
  • Overvoltage, Over-Temperature and Hiccup Undervoltage Protection
  • Adjustable Output Voltage from to 2 V
  • 3.5 mm × 4 mm, 20-Pin VQFN Package

Texas Instruments  TPS53317RGBT

The device is a FET-integrated synchronous buck regulator designed mainly for DDR termination. It can provide a regulated output at ½ VDDQ with bothsink and source capability. The device employs D-CAP+ mode operation that provides ease of use, low external componentcount and fast transient response. The device can also be used for other point-of-load (POL)regulation applications requiring up to 6 A. In addition, the device supports full, 6-A, outputsinking current capability with tight voltage regulation.

The device features two switching frequency settings (600 kHz and 1 MHz), integrateddroop support, external tracking capability, pre-bias startup, output soft discharge, integratedbootstrap switch, power good function, V5IN pin UVLO protection, and supports both ceramic andSP/POSCAP capacitors. It supports input voltages up to 6.0 V, and output voltages adjustable from to 2.0 V.

The device is available in the 3.5 mm × 4 mm, 20-pin, VQFNpackage (Green RoHs compliant and Pb free) with TI proprietary Integrated MOSFET and packaging technology and is specified from –40°C to 85°C.

For all available packages, see the orderable addendum at the end of the data sheet.