text.skipToContent text.skipToNavigation


3.5-MHz High Efficiency Step-Up Converter In Chip Scale Packaging


Package | PIN: YFF | 9
Temp: I (-40 to 85)
Carrier: Cut Tape
Qty Price
1-9 $1.45
10-24 $1.30
25-99 $1.20
100-249 $1.03
250-499 $0.95
500-749 $0.77
750-999 $0.62
1000+ $0.55


  • 93% Efficiency at 3.5MHz Operation
  • 36µA Quiescent Current
  • Wide VIN Range From 2.5V to 5.5V
  • IOUT ≥1000mA at VOUT = 5.0V, VIN ≥3.3V
  • ±2% Total DC Voltage Accuracy
  • Light-Load PFM Mode
  • True Load Disconnect During Shutdown
  • Thermal Shutdown and Overload Protection
  • Only Three Surface-Mount External Components Required
  • Total Solution Size <35mm2
  • 9-Pin NanoFreeTM (CSP) Packaging

All trademarks are the property of their respective owners.

Texas Instruments  TPS61256AYFFT

The TPS61256A device provides a power supply solution for battery-powered portableapplications. Intended for low-power applications, the TPS61256A supports up to 800-mA load currentfrom a battery discharged as low as 2.7V and allows the use of low cost chip inductor andcapacitors.

With a wide input voltage range of 2.5V to 5.5V, the device supports applications poweredby Li-Ion batteries with extended voltage range and delivers a fixed 5.0V output voltage.

The TPS61256A operates at a regulated 3.5-MHz switching frequency and enters power-savemode operation at light load currents to maintain high efficiency over the entire load currentrange. The PFM mode extends the battery life by reducing the quiescent current to 36µA (typ) duringlight load operation. Input current in shutdown mode is less than 5µA, which maximizes batterylife.

The TPS61256A offers a very small solution size due to minimum amount of externalcomponents. It allows the use of small inductors and input capacitors to achieve a small solutionsize. During shutdown, the load is completely disconnected from the battery.

These devices have limited built-in ESD protection. The leads should be shorted togetheror the device placed in conductive foam during storage or handling to prevent electrostatic damageto the MOS gates.