TXB0101DBVT

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TXB0101DBVT

1-Bit Bidirectional Voltage-Level Shifter With Auto Direction Sensing and +/-15-kV ESD Protect

Packaging

Package | PIN: DBV | 6
Temp: I (-40 to 85)
Carrier: Cut Tape
Qty Price
1-9 $0.64
10-24 $0.57
25-99 $0.53
100-249 $0.45
250-499 $0.42
500-749 $0.34
750-999 $0.27
1000+ $0.24

Features

  • Available in the Texas Instruments NanoFree™ Package
  • 1.2 V to 3.6 V on A Port and
    1.65 V to 5.5 V on B Port (VCCA ≤ VCCB)
  • VCC Isolation Feature – If Either VCC Input is at GND, All Outputs are in the High-Impedance State
  • OE Input Circuit Referenced to VCCA
  • Low Power Consumption, 5 µA Maximum ICC
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Protection Exceeds JESD 22
    • A Port
      • 2000 V Human Body Model (A114-B)
      • 250 V Machine Model (A115-A)
      • 1500 V Charged-Device Model (C101)
    • B Port
      • 15 kV Human Body Model (A114-B)
      • 250 V Machine Model (A115-A)
      • 1500 V Charged-Device Model (C101)

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Texas Instruments  TXB0101DBVT

This 1-bit noninverting translatoruses two separate configurable power-supply rails. The A port is designed to trackVCCA. VCCA accepts any supply voltage from 1.2 V to3.6 V. The B port is designed to track VCCB. VCCBaccepts any supply voltage from 1.65 V to 5.5 V. This allows for universal low-voltagebidirectional translation between any of the 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, and 5-V voltagenodes. VCCA should not exceed VCCB.

When the output-enable (OE) input is low, all outputs are placed in the high-impedancestate.

This device is fully specified for partial-power-down applications usingIoff. The Ioff circuitry disables the outputs,preventing damaging current backflow through the device when it is powered down.

To ensure the high-impedance state during power up or power down, OE should be tied toGND through a pulldown resistor; the minimum value of the resistor is determined by thecurrent-sourcing capability of the driver.

NanoFree™ package technology is a majorbreakthrough in IC packaging concepts, using the die as the package.