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UCC20225NPLT

4-A, 6-A, 2.5-kVRMS Isolated Dual-Channel Gate Driver With Single Input in LGA

Packaging

Package | PIN: NPL | 13
Temp: Q (-40 to 125)
Carrier: Cut Tape
Qty Price
1-9 $4.83
10-24 $4.35
25-99 $4.05
100-249 $3.55
250-499 $3.33
500-749 $2.83
750-999 $2.39
1000+ $2.28

Features

  • Single Input, Dual Output with Programmable Deadtime
  • 5-mm x 5-mm Space-Saving LGA-13 Package
  • Switching Parameters:
    • 19-ns Typical Propagation Delay
    • 5-ns Maximum DelayMatching
    • 6-ns Maximum Pulse-Width Distortion
  • CMTI Greater than 100-V/ns
  • 4-A Peak Source, 6-A Peak Sink Output
  • TTL and CMOS Compatible Inputs
  • 3-V to 18-V Input VCCI Range
  • Up to 25-V VDD with 8-V UVLO
  • Programmable Dead Time
  • Rejects Input Transients Shorter than 5-ns
  • Fast Disable for Power Sequencing
  • Safety-Related Certifications:
    • 3535-VPK Isolation per DIN V VDE V 0884-11:2017-01
    • 2500-VRMS Isolation for 1 Minute per UL1577
    • CQC Certification perGB4943.1-2011

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Texas Instruments  UCC20225NPLT

The UCC20225 is an isolated single input, dual-output gate driver with 4-A source and 6-Asink peak current in a 5-mm x 5-mm LGA-13 package. It is designed to drive power transistors up to5-MHz with best-in-class propagation delay and pulse-width distortion.

The input side is isolated from the two output drivers by a2.5-kVRMS isolation barrier, with minimum 100-V/ns common-mode transientimmunity (CMTI). Internal functional isolation between the two output-side drivers allows workingvoltage up to 700-VDC.

The UCC20225 allows programmable dead time (DT) through a resistor on DT pin. A disablepin shuts down both outputs simultaneously when it is set high, and allows normal operation whenleft open or grounded.

The device accepts VDD supply voltages up to 25-V. A wide input VCCI range from 3-V to18-V makes the driver suitable for interfacing with both analog and digital controllers. All thesupply voltage pins have under voltage lock-out (UVLO) protection.

With all these advanced features, the UCC20225 enables high power density, highefficiency, and robustness in a wide variety of power applications.