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Single-Channel High-Speed Low-Side Gate Driver with 5V Negative Input Voltage Handling Ability


Package | PIN: DBV | 6
Temp: Q (-40 to 125)
Carrier: Cut Tape
Qty Price
1-9 $1.52
10-24 $1.36
25-99 $1.26
100-249 $1.07
250-499 $0.99
500-749 $0.81
750-999 $0.65
1000+ $0.58


  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device Temperature Grade 1: –40°C to 125°C
      Ambient Operating Temperature Range
    • Device HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C4B
  • Low-Cost Gate-Driver Device Offering Superior
    Replacement of NPN and PNP Discrete Solutions
  • 4-A Peak Source and 8-A Peak Sink Asymmetrical Drive
  • Strong Sink Current Offers Enhanced Immunity Against
    Miller Turnon
  • Split Output Configuration (Allows Easy and Independent
    Adjustment of Turnon and Turnoff Speeds) in the
  • Fast Propagation Delays (13-ns typical)
  • Fast Rise and Fall Times (9-ns and 7-ns typical)
  • 4.5 to 18-V Single Supply Range
  • Outputs Held Low During VDD UVLO (Ensures
    Glitch-Free Operation at Power Up and Power Down)
  • TTL and CMOS Compatible Input-Logic Threshold
    (Independent of Supply Voltage)
  • Hysteretic-Logic Thresholds for High-Noise Immunity
  • Dual-Input Design (Choice of an Inverting (IN– Pin)
    or Non-Inverting (IN+ Pin) Driver Configuration)
    • Unused Input Pin can be Used for Enable or
      Disable Function
  • Output Held Low when Input Pins are Floating
  • Input Pin Absolute Maximum Voltage Levels Not
    Restricted by VDD Pin Bias Supply Voltage
  • Input Pins Capable of Withstanding –5-V DC Below
    GND pin
  • Operating Temperature Range of –40°C to 140°C
  • 6-Pin DBV (SOT-23) Package Option

Texas Instruments  UCC27511AQDBVRQ1

The UCC27511A-Q1 device is a compact gate driver that offers superior replacement of NPN and PNP discrete driver (buffer circuit) solutions. The UCC27511A-Q1 device is an automotive-grade single-channel low-side, high-speed gate driver rated for MOSFETs, IGBTs, and emerging wide-bandgap power devices such as GaN. The device features fast rise times, fall times, and propagation delays, making the UCD27511A-Q1 device suitable for high-speed applications. The device features 4-A peak source and 8-A peak sink currents with asymmetrical drive, boosting immunity against parasitic Miller turnon effect. The split output configuration enables easy and independent adjustment of rise and fall times using only two resistors and eliminating the need for an external diode.