封装信息
| 封装 | 引脚 VSONP (DQJ) | 8 |
| 工作温度范围 (°C) -55 to 150 |
| 包装数量 | 包装 2,500 | LARGE T&R |
CSD17302Q5A 的特性
- Optimized for 5V Gate Drive
- Ultralow Qg and Qgd
- Low Thermal Resistance
- Avalanche Rated
- Pb Free Terminal Plating
- RoHS Compliant
- Halogen Free
- SON 5-mm × 6-mm Plastic Package
- APPLICATIONS
- Notebook Point of Load
- Point-of-Load Synchronous Buck in Networking, Telecom and Computing Systems
CSD17302Q5A 的说明
The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.