封装信息
封装 | 引脚 VSON-CLIP (DQG) | 8 |
工作温度范围 (°C) -55 to 150 |
包装数量 | 包装 2,500 | LARGE T&R |
CSD17309Q3 的特性
- Optimized for 5 V Gate Drive
- Ultra-Low Qg and Qgd
- Low Thermal Resistance
- Avalanche Rated
- Pb Free Terminal Plating
- RoHS Compliant
- Halogen Free
- SON 3.3 mm × 3.3 mm Plastic Package
- APPLICATIONS
- Notebook Point of Load
- Point of Load Synchronous Buck in
Networking, Telecom, and Computing
Systems
NexFET Is a trademark of Texas Instruments
CSD17309Q3 的说明
This 30 V, 4.2 mΩ NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5 V gate drive applications.