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±10-A SiC/IGBT isolated gate driver with advanced protection


封装 | 引脚: DW | 16
温度: Q (-40 to 125)
包装类型: 切割管
数量 单价
1-9 $7.71
10-24 $6.94
25-99 $6.48
100-249 $5.81
250-499 $5.42
500-749 $4.72
750-999 $4.09
1000+ $4.00


  • Single channel SiC/IGBT isolated gate driver
  • AEC-Q100 qualified for automotive applications (qualification planned)
  • SiC MOSFETs and IGBTs up to 1700 V
  • 33-V maximum output drive voltage (VDD-COM)
  • High peak drive current and high CMTI
  • Active miller clamp
  • UVLO with power good on RDY
  • Small propagation delay and pulse/part skew
  • Operating temperature range –40°C to 125°C
  • Safety-related certifications (planned):
    • 8000-VPK VIOTM and2121-VPK VIORM Reinforced Isolation per DIN V VDE V0884-11 (VDE V 0884-11): 2017-01
    • 5700-VRMS Isolation for 1 Minute per UL1577

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德州仪器  PUCC21710QDWQ1

The UCC21710-Q1 is a galvanic isolated single channel gate drivers designed for up to1700V SiC MOSFETs and IGBTs with advanced protection features, best-in-class dynamic performanceand robustness.

The input side is isolated from the output side with SiO2capacitive isolation technology, supporting up to 1.5-kVRMS working voltage,12.8-kVPK surge immunity with longer than 40 years Isolation barrier life,as well as providing low part-to-part skew and high CMTI.