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Single channel isolated gate driver for SiC/IGBT with advanced protection and high-CMTI


封装 | 引脚: DW | 16
温度: Q (-40 to 125)
包装类型: 切割管
数量 单价
1-9 $6.71
10-24 $6.03
25-99 $5.63
100-249 $5.05
250-499 $4.72
500-749 $4.10
750-999 $3.55
1000+ $3.48


  • Single channel SiC/IGBT isolated gate driver
  • SiC MOSFETs and IGBTs up to 1700 V
  • 33-V maximum output drive voltage (VDD-COM)
  • High peak drive current and high CMTI
  • Active miller clamp
  • UVLO with power good on RDY
  • Small propagation delay and pulse/part skew
  • Operating temperature range –40°C to 125°C
  • Safety-related certifications (planned):
    • 8000-VPK VIOTM and2121-VPK VIORM Reinforced Isolation per DIN V VDE V0884-11 (VDE V 0884-11): 2017-01
    • 5700-VRMS Isolation for 1 Minute per UL1577

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德州仪器  PUCC21750DW

The UCC21750 is a galvanic isolated single channel gate drivers designed for up to 1700VSiC MOSFETs and IGBTs with advanced protection features, best-in-class dynamic performance androbustness.

The input side is isolated from the output side with SiO2capacitive isolation technology, supporting up to 1.5-kVRMS working voltage,12.8-kVPK surge immunity with longer than 40 years Isolation barrier life,as well as providing low part-to-part skew and high CMTI.