LMG1210 Half-bridge Open Loop Evaluation Module


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The LMG1210EVM-012 is designed to evaluate the LMG1210 Megahertz 200V half-bridge driver for GaN FETs. This EVM consists on two Gallium Nitride FETs configured in a half-bridge, driven by a single LMG1210. No controller is present on the board.

  • Demonstrates high frequency capability of driver
  • Demonstrates high CMTI withstand of the driver
  • Demonstrates the excellent propagation and matching and strength of the driver
  • Demonstrates the dead-time block functionaliy and the positive impact on efficiency
  • This is a PCB (hardware), which is orderable and demonstrates the driver stage for a laser to be used in classD audio, Envelope Tracking and high-frequency DCDC applications.
Half-bridge drivers
LMG1210 1.5-A, 3-A, 200-V half bridge gate driver, 5-V UVLO and programmable dead-time for GaNFET and MOSFET
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Evaluation board

LMG1210EVM-012 — LMG1210 Half-bridge Open Loop Evaluation Module

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Design files

Technical documentation

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Type Title Date
* EVM User's guide Using the LMG1210EVM-012 300 V Half-Bridge Driver for GaN 29 Jan 2018
Data sheet LMG1210 200-V, 1.5-A, 3-A half-bridge MOSFET and GaN FET driver with adjustable dead time for applications up to 50 MHz datasheet (Rev. D) PDF | HTML 07 Feb 2019
Certificate LMG1210EVM-012 EU Declaration of Conformity (DoC) 02 Jan 2019

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