LMG3410EVM-018

LMG3410R050 600-V 50-mΩ GaN half-bridge daughter card

LMG3410EVM-018

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Overview

LMG3410EVM-018 configures two LMG3410R050 600-V GaN FETs with Integrated driver and protection, in a half bridge. This EVM comes with all the necessary auxiliary peripheral circuitry, and is designed to work in conjunction with larger systems.

Features
  • Input voltage operates up to 600 V
  • Simple open loop design to evaluate performance of LMG3410R050
  • Single PWM input on board for PWM signal with 50 ns dead time
  • Convenient probe points for logic and power stage measurements with oscilloscope probes that have short ground spring probes
Gallium nitride (GaN) ICs
LMG3410R050 600-V 50-mΩ GaN with integrated driver and protection
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Evaluating LMG3410R050 GaN FET power stage

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Daughter card

LMG3410EVM-018 – LMG3410R050 600-V 50-mΩ GaN half-bridge daughter card

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Design files

LMG3410EVM Design Files SNOC043.ZIP (4420 KB)

Technical documentation

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Type Title Date
* User guide Using the LMG341xEVM-018 Half-bridge and LMG34XX-BB--EVM breakout board EVM (Rev. A) Mar. 08, 2019
Datasheet LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection datasheet (Rev. B) Jan. 16, 2020
More literature LMG3410EVM-018 EU Declaration of Conformity (DoC) Jan. 02, 2019

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