LMG3425EVM-041 is a prototype evaluation module and is available in limited quantities.
LMG3425EVM-041
LMG3425R050 600-V 50-mΩ with ideal diode mode half-bridge daughter card
LMG3425EVM-041
Overview
LMG3425EVM-041 configures two LMG3425R050 GaN FETs in a half-bridge with the latched over current protection function and all the necessary auxiliary peripheral circuitry. This EVM is designed to work in conjunction with larger systems.
Features
- Input voltage operates up to 600 V
- Simple open loop design to evaluate performance of LMG342XR0XX
- Single/Dual PWM input on board for PWM signal with variable dead time
- Cycle-by-cycle over current protection function
- Convenient probe points for logic and power stage measurements with oscilloscope probes that have short ground spring probes
Gallium nitride (GaN) ICs
Get started
-
;
- Order the LMG3425R050 600-V 50-mΩ with ideal diode mode half-bridge daughter card and the optional LMG342x GaN system-level evaluation motherboard for LMG342x Family ;
- Read the LMG342XEVM-04X User's Guide ;
Order & start development
Explore packages of hardware, software and documentation
HARDWARE AND SOFTWARE PACKAGE
Evaluating LMG3425R050 GaN FET power stage
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Daughter card
LMG3425EVM-041 – LMG3425R050 600-V 50-mΩ with ideal diode mode half-bridge daughter card
In stock
Limit: 5
Technical documentation
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| Type | Title | Date | |
|---|---|---|---|
| * | User guide | LMG342XEVM-04X User Guide | Oct. 26, 2020 |
| Data sheet | LMG342xR050 600-V 50-mΩ GaN FET with Integrated Driver, Protection, and Temperature Reporting datasheet (Rev. A) | Mar. 18, 2021 | |
| Certificate | LMG3425EVM-041 EU Declaration of Conformity (DoC) | Oct. 26, 2020 |
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