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LMG3425EVM-043

LMG3425R030 600-V 30-mΩ with ideal diode mode half-bridge daughter card

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LMG3425EVM-043

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Overview

LMG3425EVM-043 configures two LMG3425R030 GaN FETs in a half-bridge with the latched over current protection function and all the necessary auxiliary peripheral circuitry.  This EVM is designed to work in conjunction with larger systems.

Features
  • Input voltage operates up to 600 V
  • Simple open loop design to evaluate performance of LMG342XR0XX
  • Single/Dual PWM input on board for PWM signal with variable dead time
  • Cycle-by-cycle over current protection function
  • Convenient probe points for logic and power stage measurements with oscilloscope probes that have short ground spring probes
Gallium nitride (GaN) ICs
LMG3425R030 — 600-V 30-mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode
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Important note

LMG3425EVM-043 is a prototype evaluation module and is available in limited quantities.

Get started

  • Order the LMG3425R030 600-V 30-mΩ with ideal diode mode half-bridge daughter card and the optional LMG342x GaN system-level evaluation motherboard for LMG342x Family
  • Read the LMG342XEVM-04X User's Guide

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HARDWARE AND SOFTWARE PACKAGE

Evaluating LMG3425R030 GaN FET power stage

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Daughter card

LMG3425EVM-043 – LMG3425R030 600-V 30-mΩ with ideal diode mode half-bridge daughter card

TI's Standard Terms and Conditions for Evaluation Items apply.

Technical documentation

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Type Title Date
* User guide LMG342XEVM-04X User Guide Oct. 26, 2020
Datasheet LMG342xR030 600-V 30-mΩ GaN FET with Integrated Driver, Protection, and Temp datasheet (Rev. A) Oct. 28, 2020
More literature LMG3425EVM-043 EU Declaration of Conformity (DoC) Oct. 26, 2020

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