Multi-MHz GaN Power Stage Reference Design for High-Speed DC/DC Converters
TIDA-01634
This product has been released to the market and is available for purchase. For some products, newer alternatives may be available.
This product has been released to the market and is available for purchase. For some products, newer alternatives may be available.
See the Important Notice and Disclaimer covering reference designs and other TI resources.
Key Document
- Multi-MHz GaN Power Stage Reference Design for High-Speed DC/DC Converters
(PDF 885 KB)
26 Feb 2018
Description
This reference design implements a multi-MHz power stage design based on the LMG1210 half-bridge GaN driver and GaN power High Electron Mobility Transistors (HEMTs). With highly efficient switches and flexible dead-time adjustment, this design can significantly improve power density while achieving good efficiency as well as wide control bandwidth. This power stage design can be widely applied to many space-constrained and fast response required applications such as 5G telecom power, servers, and industrial power supplies.
Features
- Compact GaN-Based Power Stage Design With Switching up to 50 MHz
- Independent PWM inputs for high side and low side, or single PWM input with adjustable dead time
- Minimum pulse width of 3 ns
- High slew rate immunity of 300 V/ns
- Driver UVLO and overtermpertaure protection
See the Important Notice and Disclaimer covering reference designs and other TI resources.
