This reference design implements a multi-MHz power stage design based on the LMG1210 half-bridge GaN driver and GaN power High Electron Mobility Transistors (HEMTs). With highly efficient switches and flexible dead-time adjustment, this design can significantly improve power density while achieving good efficiency as well as wide control bandwidth. This power stage design can be widely applied to many space-constrained and fast response required applications such as 5G telecom power, servers, and industrial power supplies.
A fully assembled board has been developed for testing and performance validation only, and is not available for sale.
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Reference design overview and verified performance test data
Detailed schematic diagram for design layout and components
Complete listing of design components, reference designators, and manufacturers/part numbers
Detailed overview of design layout for component placement
Files used for 3D models or 2D drawings of IC components
Design file that contains information on physical board layer of design PCB
PCB layer plot file used for generating PCB design layout
Includes TI products in the design and potential alternatives.
| Type | Title | Date | |
|---|---|---|---|
| * | Design guide | Multi-MHz GaN Power Stage Reference Design for High-Speed DC/DC Converters | Feb. 26, 2018 |
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