TIDA-011011
Isolated gate driver board with isolated bias supply for 3.3kV SiC-FET reference design
TIDA-011011
概覽
This reference design provides a template for implementing gate drive designs for field effect transistors (FETs) rated up to 3.3kV. By utilizing single-channel isolated pre-drivers with split outputs, multiple variants of power FETs can be driven while maintaining high current sink and source capability. The performance of the driving design is further enhanced by incorporating a DC/DC isolated bias supply with controlled output rail voltages, enabling lower RDS(on) operation.
特點
- Gate driver design for FETs rated with voltage up to 3.3kV
- Pre-drivers with split output designs
- Controlled gate driver voltage rails
| 輸出電壓選項 | TIDA-011011.1 |
|---|---|
| Vin (最小值) (V) | 10.8 |
| Vin (最大值) (V) | 13.2 |
| Vout (Nom) (V) | 18 |
| Iout (最大) (A) | .1 |
| 輸出功率 (W) | 1.8 |
| 隔離式/非隔離式 | Isolated |
| 輸入類型 | DC |
| 拓撲結構 | Other |
已開發完全組裝的電路板，僅供測試與性能驗證，且為非賣品。
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| 重要文件 | 類型 | 標題 | 格式選項 | 下載最新的英文版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 設計指南 | Isolated Gate Driver Board With Isolated Bias Supply for 3.3kV SiC-FET Reference Design | PDF | HTML | 2026/3/20 |