SLUS892D December   2009  – December 2019 BQ24610 , BQ24617

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
    1.     Device Images
      1.      Simplified Schematic
  4. Revision History
  5. Description (continued)
  6. Device Comparison Table
  7. Pin Configuration and Functions
    1.     Pin Functions
  8. Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Typical Characteristics
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  Battery Voltage Regulation
      2. 9.3.2  Battery Current Regulation
      3. 9.3.3  Input Adapter Current Regulation
      4. 9.3.4  Precharge
      5. 9.3.5  Charge Termination, Recharge, and Safety Timer
      6. 9.3.6  Power Up
      7. 9.3.7  Enable and Disable Charging
      8. 9.3.8  System Power Selector
      9. 9.3.9  Automatic Internal Soft-Start Charger Current
      10. 9.3.10 Converter Operation
      11. 9.3.11 Synchronous and Nonsynchronous Operation
      12. 9.3.12 Cycle-by-Cycle Charge Undercurrent Protection
      13. 9.3.13 Input Overvoltage Protection (ACOV)
      14. 9.3.14 Input Undervoltage Lockout (UVLO)
      15. 9.3.15 Battery Overvoltage Protection
      16. 9.3.16 Cycle-by-Cycle Charge Overcurrent Protection
      17. 9.3.17 Thermal Shutdown Protection
      18. 9.3.18 Temperature Qualification
      19. 9.3.19 Timer Fault Recovery
      20. 9.3.20 PG Output
      21. 9.3.21 CE (Charge Enable)
      22. 9.3.22 Charge Status Outputs
      23. 9.3.23 Battery Detection
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Applications
      1. 10.2.1 System with Power Path
        1. 10.2.1.1 Design Requirements
        2. 10.2.1.2 Detailed Design Procedure
          1. 10.2.1.2.1 Inductor Selection
          2. 10.2.1.2.2 Input Capacitor
          3. 10.2.1.2.3 Output Capacitor
          4. 10.2.1.2.4 Power MOSFETs Selection
          5. 10.2.1.2.5 Input Filter Design
          6. 10.2.1.2.6 Inductor, Capacitor, and Sense Resistor Selection Guidelines
        3. 10.2.1.3 Application Curves
      2. 10.2.2 Simplified System without Power Path or DPM
        1. 10.2.2.1 Design Requirements
        2. 10.2.2.2 Detailed Design Procedure
        3. 10.2.2.3 Application Curves
      3. 10.2.3 Lead-Acid Charging System
        1. 10.2.3.1 Design Requirements
        2. 10.2.3.2 Detailed Design Procedure
        3. 10.2.3.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 Third-Party Products Disclaimer
    2. 13.2 Related Links
    3. 13.3 Receiving Notification of Documentation Updates
    4. 13.4 Support Resources
    5. 13.5 Trademarks
    6. 13.6 Electrostatic Discharge Caution
    7. 13.7 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Inductor, Capacitor, and Sense Resistor Selection Guidelines

The BQ2461x provides internal loop compensation. With this scheme, best stability occurs when the LC resonant frequency, fo, is approximately 12 kHz to 17 kHz for BQ2461x.

Table 4 provides a summary of typical LC components for various charge currents:

Table 4. Typical Inductor, Capacitor, and Sense Resistor Values as a Function of Charge Current for BQ2461x (600-kHz Switching Frequency)

CHARGE CURRENT 2 A 4 A 6 A 8 A 10 A
Output inductor LO 6.8 μH 6.8 μH 4.7 μH 3.3 μH 3.3 μH
Output capacitor CO 20 μF 20 μF 30 μF 40 μF 40 μF
Sense resistor 10 mΩ 10 mΩ 10 mΩ 10 mΩ 10 mΩ

Table 5. Component List for Typical System Circuit of Figure 20

PART DESIGNATOR QTY DESCRIPTION
Q1, Q2, Q3 3 P-channel MOSFET, –30 V, –35 A, PowerPAK 1212-8, Vishay-Siliconix, Si7617DN
Q4, Q5 2 N-channel MOSFET, 30 V, 12 A, PowerPAK 1212-8, Vishay-Siliconix, Sis412DN
D1 1 Diode, dual Schottky, 30 V, 200 mA, SOT23, Fairchild, BAT54C
D2, D3, D4 3 LED diode, green, 2.1 V, 20 mA, LTST-C190GKT
RAC, RSR 2 Sense resistor, 10 mΩ, 2010, Vishay-Dale, WSL2010R0100F
L1 1 Inductor, 6.8 µH, 5.5A, Vishay-Dale IHLP2525CZ
C8, C9, C12, C13 4 Capacitor, ceramic, 10 µF, 35 V, 20%, X7R
C4, C5 2 Capacitor, ceramic, 1 µF, 16 V, 10%, X7R
C1, C3, C6, C11 4 Capacitor, ceramic, 0.1 µF, 16 V, 10%, X7R
C2, C10 2 Capacitor, ceramic, 0.1 µF, 50 V, 10%, X7R
C7 1 Capacitor, ceramic, 1 µF, 50 V, 10%, X7R
C14, C15 (Optional) 2 Capacitor, ceramic, 0.1 µF, 50 V, 10%, X7R
C16 1 Capacitor, ceramic, 2.2 µF, 35 V, 10%, X7R
Cff 1 Capacitor, ceramic, 22 pF, 25 V, 10%, X7R
CTTC 1 Capacitor, ceramic, 0.056 µF, 16 V, 5%, X7R
R1, R3, R5, R7 4 Resistor, chip, 100 kΩ, 1/16 W, 0.5%
R2 1 Resistor, chip, 500 kΩ, 1/16 W, 0.5%
R4 1 Resistor, chip, 32.4 kΩ, 1/16 W, 0.5%
R6 1 Resistor, chip, 10 kΩ, 1/16 W, 0.5%
R8 1 Resistor, chip, 22.1 kΩ, 1/16 W, 0.5%
R9 1 Resistor, chip, 9.31 kΩ, 1/16 W, 1%
R10 1 Resistor, chip, 430 kΩ, 1/16 W, 1%
R11, R12, R13, R18, R19 5 Resistor, chip, 10 kΩ, 1/16 W, 5%
R14, R15 (optional) 2 Resistor, chip, 100 kΩ, 1/16 W, 5%
R16 1 Resistor, chip, 100 Ω, 1/16 W, 5%
R17 1 Resistor, chip, 10 Ω, 1/4 W, 5%
R20 1 Resistor, chip, 2 Ω, 1 W, 5%