SLUS893B March   2010  – June 2015

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Battery Voltage Regulation
      2. 8.3.2  Battery Current Regulation
      3. 8.3.3  Precharge
      4. 8.3.4  Charge Termination, Recharge, and Safety Timer
      5. 8.3.5  Power Up
      6. 8.3.6  Enable and Disable Charging
      7. 8.3.7  Automatic Internal Soft-Start Charger Current
      8. 8.3.8  Converter Operation
      9. 8.3.9  Synchronous and Nonsynchronous Operation
      10. 8.3.10 Cycle-by-Cycle Charge Undercurrent
      11. 8.3.11 Input Overvoltage Protection (ACOV)
      12. 8.3.12 Input Undervoltage Lockout (UVLO)
      13. 8.3.13 Battery Overvoltage Protection
      14. 8.3.14 Cycle-by-Cycle Charge Overcurrent Protection
      15. 8.3.15 Thermal Shutdown Protection
      16. 8.3.16 Temperature Qualification
      17. 8.3.17 Timer Fault Recovery
      18. 8.3.18 PG Output
      19. 8.3.19 CE (Charge Enable)
      20. 8.3.20 Charge Status Outputs
      21. 8.3.21 Battery Detection
    4. 8.4 Device Functional Modes
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Inductor Selection
        2. 9.2.2.2 Input Capacitor
        3. 9.2.2.3 Output Capacitor
        4. 9.2.2.4 Power MOSFET Selection
        5. 9.2.2.5 Input Filter Design
        6. 9.2.2.6 Inductor, Capacitor, and Sense Resistor Selection Guidelines
        7. 9.2.2.7 Maximum Output Capacitance
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Third-Party Products Disclaimer
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Community Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

11 Layout

11.1 Layout Guidelines

The switching node rise and fall times must be minimized for minimum switching loss. Proper layout of the components to minimize the high-frequency current-path loop (see Figure 21) is important to prevent electrical and magnetic field radiation and high-frequency resonant problems. The following is a PCB layout priority list for proper layout. Layout of the PCB according to this specific order is essential.

  1. Place the input capacitor as close as possible to the switching MOSFET supply and ground connections, and use the shortest possible copper trace connection. These parts should be placed on the same layer of the PCB instead of on different layers, using vias to make this connection.
  2. The IC must be placed close to the switching MOSFET gate terminals, keeping the gate-drive signal traces short for a clean MOSFET drive. The IC can be placed on the other side of the PCB from the switching MOSFETs.
  3. Place the inductor input terminal as close as possible to switching MOSFET output terminal. Minimize the copper area of this trace to lower electrical and magnetic field radiation, but make the trace wide enough to carry the charging current. Do not use multiple layers in parallel for this connection. Minimize parasitic capacitance from this area to any other trace or plane.
  4. The charging-current-sensing resistor must be placed right next to the inductor output. Route the sense leads connected across the sensing resistor back to the IC in same layer, close to each other (minimize loop area), and do not route the sense leads through a high-current path (see Figure 22 for Kelvin connection for best current accuracy). Place the decoupling capacitor on these traces next to the IC.
  5. Place the output capacitor next to the sensing-resistor output and ground.
  6. The output capacitor ground connections must be tied to the same copper that connects to the input capacitor ground before connecting to system ground.
  7. Route the analog ground separately from the power ground and use a single ground connection to tie the charger power ground to the charger analog ground. Just beneath the IC, use the copper pour for analog ground, but avoid power pins to reduce inductive and capacitive noise coupling. Connect analog ground to GND. Connect the analog ground and power ground together using the thermal pad as the single ground connection point, or use a 0-Ω resistor to tie analog ground to power ground (the thermal pad should tie to analog ground in this case). A star-connection under the thermal pad is highly recommended.
  8. It is critical to solder the exposed thermal pad on the back of the IC package to the PCB ground. Ensure that there are sufficient thermal vias directly under the IC, connecting to the ground plane on the other layers.
  9. Place decoupling capacitors next to the IC pins to make trace connections as short as possible.
  10. All via sizes and numbers must be enough for a given current path.

See the EVM design (SLUU410) for the recommended component placement with trace and via locations.

For QFN information, see SCBA017 and SLUA271.

11.2 Layout Example

bq24620 corrent_path_lus875.gifFigure 21. High-Frequency Current Path
bq24620 sens_res_lus891.gifFigure 22. Sensing Resistor PCB Layout