SLPS638B Data sheet

SLPS638B November 2016 – November 2022 CSD18510KTT

PRODUCTION DATA

Refer to the PDF data sheet for device specific package drawings

5.1 Electrical Characteristics

T_A = 25°C (unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-source voltage	V_GS = 0 V, I_D = 250 μA	40			V
I_DSS	Drain-to-source leakage current	V_GS = 0 V, V_DS = 32 V			1	μA
I_GSS	Gate-to-source leakage current	V_DS = 0 V, V_GS = 20 V			100	nA
V_GS(th)	Gate-to-source threshold voltage	V_DS = V_GS, I_D = 250 μA	1.4	1.7	2.3	V
R_DS(on)	Drain-to-source on resistance	V_GS = 4.5 V, I_D = 100 A		2.0	2.6	mΩ
R_DS(on)	Drain-to-source on resistance	V_GS = 10 V, I_D = 100 A		1.4	1.7	mΩ
g_fs	Transconductance	V_DS = 4 V, I_D = 100 A		330		S
DYNAMIC CHARACTERISTICS
C_iss	Input capacitance	V_GS = 0 V, V_DS = 20 V, ƒ = 1 MHz		8770	11400	pF
C_oss	Output capacitance			832	1080	pF
C_rss	Reverse transfer capacitance			424	551	pF
R_G	Series gate resistance			0.9	1.8	Ω
Q_g	Gate charge total (4.5 V)	V_DS = 20 V, I_D = 100 A		58	75	nC
Q_g	Gate charge total (10 V)			118	153	nC
Q_gd	Gate charge gate-to-drain			21		nC
Q_gs	Gate charge gate-to-source			28		nC
Q_g(th)	Gate charge at V_th			15		nC
Q_oss	Output charge	V_DS = 20 V, V_GS = 0 V		35		nC
t_d(on)	Turnon delay time	V_DS = 20 V, V_GS = 10 V, I_DS = 100 A, R_G = 0 Ω		10		ns
t_r	Rise time			8		ns
t_d(off)	Turnoff delay time			29		ns
t_f	Fall time			8		ns
DIODE CHARACTERISTICS
V_SD	Diode forward voltage	I_SD = 100 A, V_GS = 0 V		0.85	1.0	V
Q_rr	Reverse recovery charge	V_DS= 20 V, I_F = 100 A, di/dt = 300 A/μs		70		nC
t_rr	Reverse recovery time	V_DS= 20 V, I_F = 100 A, di/dt = 300 A/μs		41		ns