SLPS624A December   2016  – March 2019 CSD18512Q5B

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
    1.     Top View
      1.      Device Images
        1.       RDS(on) vs VGS
        2.       Gate Charge
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Community Resources
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q5B Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Pattern
    4. 7.4 Q5B Tape and Reel Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain to source voltage VGS = 0 V, ID = 250 μA 40 V
IDSS Drain to source leakage current VGS = 0 V, VDS = 32 V 1 μA
IGSS Gate to source leakage current VDS = 0 V, VGS = 20 V 100 nA
VGS(th) Gate to source threshold voltage VDS = VGS, ID = 250 μA 1.3 1.6 2.2 V
RDS(on) Drain to source on resistance VGS = 4.5 V, ID = 30 A 1.8 2.3 mΩ
VGS = 10 V, ID = 30 A 1.3 1.6 mΩ
gfs Transconductance VDS = 20 V, ID = 30 A 136 S
DYNAMIC CHARACTERISTICS
Ciss Input capacitance VGS = 0 V, VDS = 20 V, ƒ= 1 MHz 5480 7120 pF
Coss Output capacitance 537 699 pF
Crss Reverse transfer capacitance 256 333 pF
RG Series gate resistance 1.0 2.0 Ω
Qg Gate charge total (4.5 V) VDS = 20 V, ID = 30 A 37 48 nC
Qg Gate charge total (10 V) 75 98 nC
Qgd Gate charge gate to drain 13.3 nC
Qgs Gate charge gate to source 15.1 nC
Qg(th) Gate charge at Vth 8.2 nC
Qoss Output charge VDS = 20 V, VGS = 0 V 23 nC
td(on) Turn on delay time VDS = 20 V, VGS = 10 V,
IDS = 30 A, RG = 0 Ω		 7 ns
tr Rise time 16 ns
td(off) Turn off delay time 31 ns
tf Fall time 7 ns
DIODE CHARACTERISTICS
VSD Diode forward voltage ISD = 30 A, VGS = 0 V 0.75 1.0 V
Qrr Reverse recovery charge VDS= 20 V, IF = 30 A,
di/dt = 300 A/μs		 22 nC
trr Reverse recovery time 17 ns