SLPS557A June 2015 – April 2024 CSD18542KCS
PRODUCTION DATA
- 1
- 1Features
- 2Applications
- 3Description
- 4Specifications
- 5Device and Documentation Support
- 6Revision History
- 7Mechanical, Packaging, and Orderable Information
Package Options
Refer to the PDF data sheet for device specific package drawings
Mechanical Data (Package|Pins)
- KCS|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information
3 Description
This 60V, 3.3mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
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Product Summary
| TA = 25°C | TYPICAL VALUE | UNIT | ||
|---|---|---|---|---|
| VDS | Drain-to-source voltage | 60 | V | |
| Qg | Gate charge total (10V) | 44 | nC | |
| Qgd | Gate charge gate-to-drain | 6.9 | nC | |
| RDS(on) | Drain-to-source on-resistance | VGS = 4.5V | 4.0 | mΩ |
| VGS = 10V | 3.3 | mΩ | ||
| VGS(th) | Threshold voltage | 1.8 | V | |
Ordering Information(1)
| DEVICE | QTY | MEDIA | PACKAGE | SHIP |
|---|---|---|---|---|
| CSD18542KCS | 50 | Tube | TO-220 Plastic Package | Tube |
(1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
| TA = 25°C | VALUE | UNIT | |
|---|---|---|---|
| VDS | Drain-to-source voltage | 60 | V |
| VGS | Gate-to-source voltage | ±20 | V |
| ID | Continuous drain current (package limited) | 200 | A |
| Continuous drain current (silicon limited), TC = 25°C | 170 | ||
| Continuous drain current (silicon limited), TC = 100°C | 120 | ||
| IDM | Pulsed drain current (1) | 400 | A |
| PD | Power dissipation | 200 | W |
| TJ, Tstg | Operating junction, Storage temperature | –55 to 175 | °C |
| EAS | Avalanche energy, single
pulse ID = 75A, L = 0.1mH, RG = 25Ω | 281 | mJ |
(1) Max RθJC = 0.6°C/W, pulse duration ≤100μs, duty cycle ≤1%
RDS(on) vs VGS |
Gate
Charge |