SLPS530 January   2015 CSD19534KCS

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 KCS Package Dimensions

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • KCS|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5 Specifications

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 250 μA 100 V
IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = 80 V 1 μA
IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = 20 V 100 nA
VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = 250 μA 2.4 2.8 3.4 V
RDS(on) Drain-to-Source On-Resistance VGS = 6 V, ID = 30 A 16.3 20.0 mΩ
VGS = 10 V, ID = 30 A 13.7 16.5 mΩ
gƒs Transconductance VDS = 10 V, ID = 30 A 80 S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VGS = 0 V, VDS = 50 V, ƒ = 1 MHz 1290 1670 pF
Coss Output Capacitance 257 334 pF
Crss Reverse Transfer Capacitance 5.7 7.4 pF
RG Series Gate Resistance 1.1 2.2 Ω
Qg Gate Charge Total (10 V) VDS = 50 V, ID = 30 A 17.1 22.2 nC
Qgd Gate Charge Gate-to-Drain 3.2 nC
Qgs Gate Charge Gate-to-Source 5.1 nC
Qg(th) Gate Charge at Vth 3.3 nC
Qoss Output Charge VDS = 50 V, VGS = 0 V 44 nC
td(on) Turn On Delay Time VDS = 50 V, VGS = 10 V,
IDS = 30 A, RG = 0 Ω		 6 ns
tr Rise Time 2 ns
td(off) Turn Off Delay Time 9 ns
tƒ Fall Time 1 ns
DIODE CHARACTERISTICS
VSD Diode Forward Voltage ISD = 30 A, VGS = 0 V 0.9 1.1 V
Qrr Reverse Recovery Charge VDS= 50 V, IF = 30 A,
di/dt = 300 A/μs		 195 nC
trr Reverse Recovery Time 72 ns

5.2 Thermal Information

(TA = 25°C unless otherwise stated)
THERMAL METRIC MIN TYP MAX UNIT
RθJC Junction-to-Case Thermal Resistance 1.3 °C/W
RθJA Junction-to-Ambient Thermal Resistance 62

5.3 Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)
D001_SLPS530_r2.pngFigure 1. Transient Thermal Impedance
D002_SLPS530.gif
Figure 2. Saturation Characteristics
D004_SLPS530_r2.gif
ID = 30 A VDS = 50 V
Figure 4. Gate Charge
D006_SLPS530.gif
ID = 250 µA
Figure 6. Threshold Voltage vs Temperature
D008_SLPS530.gif
ID = 30 A
Figure 8. Normalized On-State Resistance vs Temperature
D010_SLPS530.gif
Single Pulse, Max RθJC = 1.3°C/W
Figure 10. Maximum Safe Operating Area
D012_SLPS530_r2.gif
Figure 12. Maximum Drain Current vs Temperature
D003_SLPS530.gif
VDS = 5 V
Figure 3. Transfer Characteristics
D005_SLPS530_r3.gif
Figure 5. Capacitance
D007_SLPS530.gif
Figure 7. On-State Resistance vs Gate-to-Source Voltage
D009_SLPS530.gif
Figure 9. Typical Diode Forward Voltage
D011_SLPS530_r2.gif
Figure 11. Single Pulse Unclamped Inductive Switching