SLPS494B November   2014  – February 2017 CSD83325L

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Pattern

Package Options

Mechanical Data (Package|Pins)
  • YJE|6
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Specifications

Electrical Characteristics

TA = 25°C (unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVS1S2 Source-to-source voltage VGS = 0 V, IS = 250 μA 12 V
IS1S2 Source-to-source leakage current VGS = 0 V, VS1S2 = 9.6 V 1 μA
IGSS Gate-to-source leakage current VS1S2 = 0 V, VGS = 10 V 10 µA
VGS(th) Gate-to-source threshold voltage VS1S2 = VGS, IS = 250 μA 0.75 0.95 1.25 V
RS1S2(on) Source-to-source on resistance VGS = 2.5 V, IS = 5 A 14.0 17.5 23.0
VGS = 3.8 V, IS = 5 A 8.8 10.9 13.0
VGS = 4.5 V, IS = 5 A 7.9 9.9 11.9
gfs Transconductance VS1S2 = 1.2 V, IS = 5 A 36 S
DYNAMIC CHARACTERISTICS(1)
Ciss Input capacitance VGS = 0 V, VS1S2 = 6 V, ƒ = 1 MHz 902 1170 pF
Coss Output capacitance 187 243 pF
Crss Reverse transfer capacitance 111 144 pF
Qg Gate charge total (4.5 V) VS1S2 = 6 V, IS = 5 A 8.4 10.9 nC
Qgd Gate charge gate-to-drain 1.9 nC
Qgs Gate charge gate-to-source 2.2 nC
Qg(th) Gate charge at Vth 0.6 nC
Qoss Output charge VS1S2 = 6 V, VGS = 0 V 2.9 nC
td(on) Turnon delay time VS1S2 = 6 V, VGS = 4.5 V,
IS1S2 = 5 A, RG = 0 Ω
205 ns
tr Rise time 353 ns
td(off) Turnoff delay time 711 ns
tf Fall time 589 ns
DIODE CHARACTERISTICS
VF(S-S) Source-to-source diode forward voltage ISS = 5 A, VG1S1 = 0 V, VG2S2 = 4.5 V 0.79 1.0 V
Dynamic characteristics values specified are per single FET.

Thermal Information

TA = 25°C (unless otherwise stated)
THERMAL METRIC MIN TYP MAX UNIT
RθJA Junction-to-ambient thermal resistance(1) 150 °C/W
Junction-to-ambient thermal resistance(2) 55
Device mounted on FR4 material with minimum Cu mounting area.
Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu.

Typical MOSFET Characteristics

TA = 25°C (unless otherwise stated)
CSD83325L D001_SLPS494_r2.png
Figure 1. Transient Thermal Impedance
CSD83325L D002_SLPS494.gif
Figure 2. Saturation Characteristics
CSD83325L D003_SLPS494.gif
VS1S2 = 5 V
Figure 3. Transfer Characteristics
CSD83325L D004_SLPS494_r2.gif
IS = 5 A VS1S2 = 6 V
Figure 4. Gate Charge
CSD83325L D006_SLPS494.gif
IS = 250 µA
Figure 6. Threshold Voltage vs Temperature
CSD83325L D008_SLPS494.gif
IS = 5 A
Figure 8. Normalized On-State Resistance vs Temperature
CSD83325L D009_SLPS494_r2.gif
Single pulse, max RθJA = 150°C/W
Figure 10. Maximum Safe Operating Area
CSD83325L D005_SLPS494.gif
Figure 5. Capacitance
CSD83325L D007_SLPS494_r2.gif
Figure 7. On-State Source-to-Source Resistance vs Gate-to-Source Voltage
CSD83325L D099_SLPS494.gif
Figure 9. Typical Diode Forward Voltage
CSD83325L D010_SLPS494_r3.gif
Figure 11. Maximum Source Current vs Temperature