CSD83325L CSD83325L, Dual N-Channel NexFET™ Power MOSFETs | TI.com

CSD83325L (ACTIVE) CSD83325L, Dual N-Channel NexFET™ Power MOSFETs

 

Description

This 12-V, 9.9-mΩ, 2.2-mm × 1.15-mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint. Its small footprint and common drain configuration make the device ideal for battery pack applications in small handheld devices.

Features

  • Common Drain Configuration
  • Low-On Resistance
  • Small Footprint of 2.2 mm × 1.15 mm
  • Lead Free
  • RoHS Compliant
  • Halogen Free
  • Gate ESD Protection

Parametrics

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Part number Order VDS (V) Configuration Rds(on) max at VGS=4.5 V (mOhms) Rds(on) max at VGS=10 V (mOhms) IDM, max pulsed drain current (Max) (A) QG typ (nC) QGD typ (nC) Package (mm) RDS(on) typ at VGS=2.5 V (Typ) (mOhm) VGS (V) VGSTH typ (V) Logic level Rating
CSD83325L Order now 12     Dual     5.9       52     8.4     1.9     LGA     8.4     10     0.95     Yes     Catalog    
CSD85302L Order now 20     Dual Common Drain     24       37     6     1.4     LGA 1.35x1.35     29     10     0.9     Yes     Catalog    
CSD87313DMS Order now 30     Dual Common Drain     5.5         28     6     SON3x3     6.6     10     0.9     Yes     Catalog    
CSD87501L Order now 30     Dual Common Drain     5.5     3.9     72     15     6     LGA       20     1.8     Yes     Catalog