CSD83325L 12V, N ch NexFET MOSFET™, dual LGA, 5.9mOhm | TI.com

CSD83325L (ACTIVE) 12V, N ch NexFET MOSFET™, dual LGA, 5.9mOhm

 

Description

This 12-V, 9.9-mΩ, 2.2-mm × 1.15-mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint. Its small footprint and common drain configuration make the device ideal for battery pack applications in small handheld devices.

Features

  • Common Drain Configuration
  • Low-On Resistance
  • Small Footprint of 2.2 mm × 1.15 mm
  • Lead Free
  • RoHS Compliant
  • Halogen Free
  • Gate ESD Protection

Parametrics

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Part number Order VDS (V) Configuration Rds(on) max at VGS=4.5 V (mOhms) Rds(on) max at VGS=10 V (mOhms) IDM, max pulsed drain current (Max) (A) QG typ (nC) QGD typ (nC) Package (mm) RDS(on) typ at VGS=2.5 V (Typ) (mOhm) VGS (V) VGSTH typ (V) Logic level
CSD83325L Order now 12     Dual     5.9       52     8.4     1.9     LGA     8.4     10     0.95     Yes    
CSD85302L Order now 20     Dual Common Drain     24       37     6     1.4     LGA 1.35x1.35     29     10     0.9     Yes    
CSD87313DMS Order now 30     Dual Common Drain     5.5         28     6     SON3x3     6.6     10     0.9     Yes    
CSD87501L Order now 30     Dual Common Drain     5.5     3.9     72     15     6     LGA       20     1.8     Yes