CSD83325L 12V, N ch NexFET MOSFET™, dual LGA, 5.9mOhm | TI.com

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12V, N ch NexFET MOSFET™, dual LGA, 5.9mOhm



This 12-V, 9.9-mΩ, 2.2-mm × 1.15-mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint. Its small footprint and common drain configuration make the device ideal for battery pack applications in small handheld devices.


  • Common Drain Configuration
  • Low-On Resistance
  • Small Footprint of 2.2 mm × 1.15 mm
  • Lead Free
  • RoHS Compliant
  • Halogen Free
  • Gate ESD Protection


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Part number Order VDS (V) Configuration Rds(on) max at VGS=4.5 V (mOhms) Rds(on) max at VGS=10 V (mOhms) IDM, max pulsed drain current (Max) (A) QG typ (nC) QGD typ (nC) Package (mm) RDS(on) typ at VGS=2.5 V (Typ) (mOhm) VGS (V) VGSTH typ (V) Logic level
CSD83325L Order now 12     Dual Common Drain     5.9       52     8.4     1.9     LGA     8.4     10     0.95     Yes    
CSD85302L Order now 20     Dual Common Drain     24       37     6     1.4     LGA 1.35x1.35     29     10     0.9     Yes    
CSD87313DMS Order now 30     Dual Common Drain     5.5         28     6     SON3x3     6.6     10     0.9     Yes    
CSD87501L Order now 30     Dual Common Drain     5.5     3.9     72     15     6     LGA       20     1.8     Yes