SLIS175 November   2016 DRV8872-Q1

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
    1.     Device Images
      1.      Simplified Schematic
      2.      H-Bridge States
  4. Revision History
  5. Pin Configuration and Functions
    1.     Pin Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Bridge Control
      2. 7.3.2 Sleep Mode
      3. 7.3.3 Current Regulation
      4. 7.3.4 Dead Time
      5. 7.3.5 Protection Circuits
        1. 7.3.5.1 VM Undervoltage Lockout (UVLO)
        2. 7.3.5.2 Overcurrent Protection (OCP)
        3. 7.3.5.3 Thermal Shutdown (TSD)
    4. 7.4 Device Functional Modes
      1. 7.4.1 PWM With Current Regulation
      2. 7.4.2 PWM Without Current Regulation
      3. 7.4.3 Static Inputs With Current Regulation
      4. 7.4.4 VM Control
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Motor Voltage
        2. 8.2.2.2 Drive Current
        3. 8.2.2.3 Sense Resistor
      3. 8.2.3 Application Curves
  9. Power Supply Recommendations
    1. 9.1 Bulk Capacitance
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Considerations
    4. 10.4 Power Dissipation
      1. 10.4.1 Heatsinking
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DDA|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Electrical Characteristics

Over recommended operating conditions unless otherwise noted. Typical limits apply for TA = 25°C and VVM = 24 V
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER SUPPLY (VM)
VVM VM operating voltage 6.8 45 V
IVM VM operating supply current 3 10 mA
IVMSLEEP VM sleep current VM = 12 V 13 µA
tON Turnon time(1) VM > VUVLO with IN1 or IN2 high 40 50 µs
LOGIC-LEVEL INPUTS (IN1, IN2)
VIL Input logic low voltage 0.5 V
VIH Input logic high voltage 1.6 V
VHYS Input logic hysteresis 0.5 V
IIL Input logic low current VIN = 0 V –1 1 μA
IIH Input logic high current VIN = 3.3 V 33 100 μA
RPD Pulldown resistance To GND 100 kΩ
tPD Propagation delay INx to OUTx change (see Figure 6) 0.7 1 μs
tsleep Time to sleep Inputs low to sleep 1 1.5 ms
MOTOR DRIVER OUTPUTS (OUT1, OUT2)
RDS(ON) High-side FET on resistance VM = 24 V, I = 1 A, fPWM = 25 kHz 307 610 mΩ
RDS(ON) Low-side FET on resistance VM = 24 V, I = 1 A, fPWM = 25 kHz 258 500 mΩ
tDEAD Output dead time 250 ns
Vd Body diode forward voltage IOUT = 1 A 0.8 1 V
CURRENT REGULATION
VTRIP ISEN voltage for current chopping 0.32 0.35 0.38 V
tOFF PWM off-time 25 μs
tBLANK PWM blanking time 2 µs
PROTECTION CIRCUITS
VUVLO VM undervoltage lockout VM falls until UVLO triggers 6.3 6.5 V
VM rises until operation recovers 6.4 6.7
VUV,HYS VM undervoltage hysteresis Rising to falling threshold 100 180 mV
IOCP Overcurrent protection trip level 3.7 4.5 6.6 A
tOCP Overcurrent deglitch time 2 μs
tRETRY Overcurrent retry time 3 ms
TSD Thermal shutdown temperature(2) 155 180 °C
THYS Thermal shutdown hysteresis(2) 40 °C
nFAULT OPEN DRAIN OUTPUT
VOL Output low voltage IO = 5 mA 0.5 V
IOH Output high leakage current VO = 3.3 V 1 µA
tON applies when the device initially powers up, and when it exits sleep mode.
Ensured by design