SBOS805C July   2016  – September 2023 INA250-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Integrated Shunt Resistor
      2. 7.3.2 Short-Circuit Duration
      3. 7.3.3 Temperature Stability
    4. 7.4 Device Functional Modes
      1. 7.4.1 Amplifier Operation
      2. 7.4.2 Input Filtering
        1. 7.4.2.1 Calculating Gain Error Resulting from External Filter Resistance
      3. 7.4.3 Shutting Down the Device
      4. 7.4.4 Using the Device with Common-Mode Transients Above 36 V
  9. 8 Applications and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Current Summing
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
      2. 8.2.2 Parallel Multiple INA250-Q1 Devices for Higher Current
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
        3. 8.2.2.3 Application Curve
      3. 8.2.3 Current Differencing
        1. 8.2.3.1 Design Requirements
        2. 8.2.3.2 Detailed Design Procedure
        3. 8.2.3.3 Application Curve
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Examples
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

4 Revision History

Changes from Revision B (April 2020) to Revision C (September 2023)

  • Changed the numbering format for tables, figures, and cross-references throughout the documentGo
  • Changed the Device Information table to Package Information Go
  • Changed the Shunt resistance (SH+ to SH–) minimum value for use as stand-alone resistor from: 1.9 mΩ to 1.8 mΩ in the Electrical Characteristics tableGo
  • Changed the Shunt resistance (SH+ to SH–) minimum value for use as stand-alone resistor from: 2.1 mΩ to 2.2 mΩ in the Electrical Characteristics tableGo

Changes from Revision A (November 2016) to Revision B (April 2020)

  • Added Functional Safety-Capable informationGo

Changes from Revision * (July 2016) to Revision A (November 2016)

  • Document status changed from Product Preview to Production Data Go
  • Changed maximum charged-device model ESD value from ±750 to ±1000 Go
  • Changed maximum IB values in the Electrical Characteristics table from ±35 to ±40Go