SBOS914F October   2018  – April 2021 INA592

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics: G = 1/2
    6. 7.6 Electrical Characteristics: G = 2
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Basic Power Supply and Signal Connections
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Operating Voltage
          2. 9.2.1.2.2 Offset Voltage Trim
          3. 9.2.1.2.3 Input Voltage Range
          4. 9.2.1.2.4 Capacitive Load Drive Capability
        3. 9.2.1.3 Application Curve
      2. 9.2.2 Additional Applications
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Support Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

3 Description

The INA592 device is a low-power, wide bandwidth difference amplifier consisting of a precision operational amplifier (op amp) and a precision resistor network. Excellent tracking of resistors (TCR) maintains gain accuracy and common-mode rejection over temperature. Unique features such as low offset 40 μV (maximum), low offset drift (2 μV/°C maximum) high slew rate (18 V/μs), and high capacitive load drive of up to 500 pF make the INA592 a robust, high-performance difference amplifier for high-voltage industrial applications. The common-mode range of the internal op amp extends to the negative supply, enabling the device to operate in single-supply applications. The device operates on single (4.5 V to 36 V) or dual supplies (±2.25 V to ±18 V).

The difference amplifier is the foundation of many commonly used circuits. The INA592 provides this circuit function without using an expensive precision resistor network.

Device Information
PART NUMBER PACKAGE(1) BODY SIZE (NOM)
INA592 SOIC (8) 4.90 mm × 3.91 mm
VSSOP (8) 3.00 mm × 3.00 mm
VSON (10) 3.00 mm × 3.00 mm
(1) For all available packages, see the package option addendum at the end of the data sheet.

 

GUID-82FDC750-2C73-42DD-9EDA-A977BCC83C5D-low.gifINA592D/DGK in a Differential Input Data Acquisition Application
GUID-CE3CA77D-0683-479C-AA0E-1BC19EFF324B-low.gifTypical Distribution of Offset Voltage (RTO)
G = 1/2, VS = ±18 V