SBOS631B June   2012  – November 2017 INA827

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
  7. 7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Setting the Gain
        1. 8.3.1.1 Gain Drift
      2. 8.3.2  Offset Trimming
      3. 8.3.3  Input Common-Mode Range
      4. 8.3.4  Inside the INA827
      5. 8.3.5  Input Protection
      6. 8.3.6  Input Bias Current Return Path
      7. 8.3.7  Reference Pin
      8. 8.3.8  Dynamic Performance
      9. 8.3.9  Operating Voltage
        1. 8.3.9.1 Low-Voltage Operation
      10. 8.3.10 Error Sources
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 CMRR vs Frequency
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Community Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings(1)

MIN MAX UNIT
Voltage Supply –20 20 V
Input –40 40
REF input –20 20 V
Output short-circuit(2) Continuous
Temperature range Operating, TA –55 150 °C
Junction, TJ 175
Storage, Tstg –65 150
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Short-circuit to VS / 2.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±750
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
Supply voltage Single supply 3 36 V
Dual supply ±1.5 ±18
Specified temperature –40 125 °C
Operating temperature –50 150 °C

6.4 Thermal Information

THERMAL METRIC(1) INA827 UNIT
DGK (VSSOP)
8 PINS
RθJA Junction-to-ambient thermal resistance 215.4 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 66.3 °C/W
RθJB Junction-to-board thermal resistance 97.8 °C/W
ψJT Junction-to-top characterization parameter 10.5 °C/W
ψJB Junction-to-board characterization parameter 96.1 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

at TA = +25°C, VS = ±15 V, RL = 10 kΩ, VREF = 0 V, and G = 5 (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT
VOSI Offset voltage(1) Input stage RTI, VOS = VOSI + (VOSO / G) 40 150 µV
TA = –40°C to +125°C 0.5 2.5 µV/°C
VOSO Output stage RTI, VOS = VOSI + (VOSO / G) 500 2000 µV
TA = –40°C to +125°C 5 30 µV/°C
PSRR Power-supply rejection ratio G = 5, VS = ±1.5 V to ±18 V 100 120 dB
G = 10, VS = ±1.5 V to ±18 V 106 126
G > 100, VS = ±1.5 V to ±18 V 120 140
ZIN Impedance Differential 2 || 1 GΩ || pF
Common-mode 10 || 5
RFI filter, –3-dB frequency 25 MHz
VCM Operating input range(2) VS = ±1.5 V to ±18 V, VO = 0 V (V–) – 0.2 (V+) – 0.9 V
VS = ±1.5 V to ±18 V, VO = 0 V, TA = +125°C (V–) – 0.05 (V+) – 0.8
VS = ±1.5 V to ±18 V, VO = 0 V, TA = –40°C (V–) – 0.3 (V+) – 0.95
Input overvoltage range TA = –40°C to +125°C (V+) – 40 (V–) + 40 V
CMRR Common-mode rejection ratio DC to 60 Hz G = 5, VCM = V– to (V+) – 1 V 88 100 dB
G = 10, VCM = V– to (V+) – 1 V 94 106
G > 100, VCM = V– to (V+) – 1 V 110 126
At 5 kHz G = 5, VCM = V– to (V+) – 1 V 88
G = 10, VCM = V– to (V+) – 1 V 94
G > 100, VCM = V– to (V+) – 1 V 104
BIAS CURRENT
IB Input bias current 35 50 nA
TA = –40°C to +125°C 95
IOS Input offset current –5 0.7 5 nA
TA = –40°C to +125°C 10
NOISE VOLTAGE(4)
eNI Voltage noise Input f = 1 kHz, G = 1000, RS = 0 Ω 17 18 nV/√Hz
eNO Output f = 1 kHz, G = 5, RS = 0 Ω 250 285
RTI Referred-to-input G = 5, fB = 0.1 Hz to 10 Hz, RS = 0 Ω 1.4 µVPP
G = 1000, fB = 0.1 Hz to 10 Hz, RS = 0 Ω 0.5
iN Noise current f = 1 kHz 120 fA/√Hz
fB = 0.1 Hz to 10 Hz 5 pAPP
GAIN
G Gain equation INA827 q_ec_g_equation_bos631.gif V/V
G Range of gain 5 1000 V/V
GE Gain error G = 5, VO = ±10 V ±0.005% ±0.035%
G = 10 to 1000, VO = ±10 V ±0.1% ±0.4%
Gain versus temperature(3) G = 5, TA = –40°C to +125°C ±0.1 ±1 ppm/°C
G > 5, TA = –40°C to +125°C 8 25
Gain nonlinearity G = 5 to 100, VO = –10 V to +10 V, RL = 10 kΩ 2 5 ppm
G = 1000, VO = –10 V to +10 V, RL = 10 kΩ 20 50
OUTPUT
Voltage swing RL = 10 kΩ (V–) + 0.1 (V+) – 0.15 V
Load capacitance stability 1000 pF
Short-circuit current Continuous to common ±16 mA
FREQUENCY RESPONSE
BW Bandwidth, –3 dB G = 5 600 kHz
G = 10 530
G = 100 150
G = 1000 15
SR Slew rate G = 5, VO = ±14.5 V 1.5 V/µs
G = 100, VO = ±14.5 V 1.5
tS Settling time To 0.01% G = 5, VSTEP = 10 V 10 µs
G = 100, VSTEP = 10 V 12
G = 1000, VSTEP = 10 V 95
To 0.001% G = 1, VSTEP = 10 V 11
G = 100, VSTEP = 10 V 18
G = 1000, VSTEP = 10 V 118
REFERENCE INPUT
RIN Input impedance 60 kΩ
Voltage range V– V+ V
Gain to output 1 V/V
Reference gain error 0.01 %
POWER SUPPLY
VS Power-supply voltage Single 3.0 36 V
Dual ±1.5 ±18
IQ Quiescent current VIN = 0 V 200 250 µA
TA = –40°C to +125°C 250 320
TEMPERATURE RANGE
Specified –40 125 °C
Operating –50 150 °C
θJA Thermal resistance 215 °C/W
(1) Total offset, referred-to-input (RTI): VOS = VOSI + (VOSO / G).
(2) Input voltage range of the INA827 input stage. The input range depends on the common-mode voltage, differential voltage, gain, and reference voltage. See the Typical Characteristics section for more information.
(3) The values specified for G > 5 do not include the effects of the external gain-setting resistor, RG.
(4)
Total RTI voltage noise = INA827 q_total_rti_noise_bos562.gif.