SNVS572E July   2008  – January 2016 LM25037 , LM25037-Q1

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings: LM25037
    3. 6.3 ESD Ratings: LM25037-Q1
    4. 6.4 Recommended Operating Conditions
    5. 6.5 Thermal Information
    6. 6.6 Electrical Characteristics
    7. 6.7 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 High-Voltage Start-Up Regulator
      2. 7.3.2 Line Undervoltage Detector
      3. 7.3.3 Reference
      4. 7.3.4 Error Amplifier
      5. 7.3.5 Cycle-By-Cycle Current Limit
      6. 7.3.6 Overload Protection Timer
      7. 7.3.7 Soft-Start
      8. 7.3.8 PWM Comparator
      9. 7.3.9 RAMP Pin
    4. 7.4 Device Functional Modes
      1. 7.4.1 Feed-Forward Voltage Mode
      2. 7.4.2 Current Mode
      3. 7.4.3 Oscillator
      4. 7.4.4 Sync Capability
      5. 7.4.5 Gate Driver Outputs (OUTA and OUTB)
      6. 7.4.6 Thermal Protection
  8. Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Topology and Control Algorithm Choice
      2. 8.1.2 Voltage Mode Control Using the LM25037
      3. 8.1.3 Current Mode Control Using the LM25037
      4. 8.1.4 VIN and VCC
      5. 8.1.5 Applications With >75-V Input
      6. 8.1.6 Current Sense
      7. 8.1.7 UVLO Divider Selection
      8. 8.1.8 Hiccup Mode Current Limit Restart (RES)
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1  Oscillator Frequency and Maximum Duty Cycle
        2. 8.2.2.2  Power Stage Design
        3. 8.2.2.3  UVLO Setting
        4. 8.2.2.4  VIN, VCC, Start-Up
        5. 8.2.2.5  Current Sense Resistor
        6. 8.2.2.6  Current-Mode Control
        7. 8.2.2.7  Slope Compensation Ramp
        8. 8.2.2.8  Soft-start
        9. 8.2.2.9  Overload Timer
        10. 8.2.2.10 Output Voltage Feedback
      3. 8.2.3 Application Curves
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Related Links
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating junction temperature range (unless otherwise noted)(1)(2)
MIN MAX UNIT
VIN to GND –0.3 76 V
VCC, RAMP , OUTA, OUTB to GND –0.3 16 V
CS to GND –0.3 1 V
UVLO, FB, RT2, RT1, SS, REF to GND –0.3 7 V
COMP, RES(3)
Junction temperature 150 °C
Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) If Military/Aerospace specified devices are required, contact the Texas Instruments Sales Office/ Distributors for availability and specifications.
(3) COMP, RES are output pins. As such, TI does not recommend connecting external power sources to these pins.

6.2 ESD Ratings: LM25037

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±750
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 ESD Ratings: LM25037-Q1

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±2000 V
Charged-device model (CDM), per AEC Q100-011 All pins ±750
Corner pins (1, 8, 9, 16) ±750
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.4 Recommended Operating Conditions

over operating junction temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VIN voltage 5.5 75 V
External voltage applied to VCC 8 14 V
Operating junction temperature −40 125 °C

6.5 Thermal Information

THERMAL METRIC(1) LM25037/LM25037-Q1 UNIT
PW (TSSOP)
16 PINS
RθJA Junction-to-ambient thermal resistance 99.9 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 32.6 °C/W
RθJB Junction-to-board thermal resistance 45.8 °C/W
ψJT Junction-to-top characterization parameter 2 °C/W
ψJB Junction-to-board characterization parameter 45.1 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.6 Electrical Characteristics

VVIN = 12V, VVCC = 10V, RRT1 = 30.1 kΩ, RRT2 = 30.1 kΩ, VUVLO = 3 V, TJ =−40°C to +125° unless otherwise stated.(1)(2)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
START-UP REGULATOR (VCC PIN)
VVCC VCC voltage IVCC = 10 mA 7.2 7.7 8.1 V
IVCC(Lim) VCC current limit VVCC = 7 V 20 mA
VVCC(UV) VCC Undervoltage threshold 4.6 5 5.4 V
Hysteresis 0.5 V
IVIN Start-up regulator current VVIN = 20 V, VUVLO = 0 V 35 58 µA
VVIN = 75 V, VUVLO = 0 V 45 80 µA
Supply current into VCC from external source Outputs and COMP open, VVCC = 10 V, Outputs switching 4 mA
VOLTAGE REFERENCE REGULATOR (REF PIN)
VREF REF Voltage IREF = 0 mA 4.75 5 5.15 V
REF Voltage Regulation IREF = 0 to 2.5 mA 7 25 mV
IREF(Lim) REF Current Limit VREF = 4.5 V 5 10 mA
VREF Undervoltage threshold 3.7 4 4.3 V
VREF(UV) Hysteresis 0.4 V
UNDERVOLTAGE LOCKOUT AND SHUTDOWN (UVLO PIN)
VUVLO Undervoltage threshold 1.20 1.25 1.295 V
IUVLO Hysteresis current UVLO pin sinking 17 22 26 µA
Undervoltage shutdown threshold UVLO voltage rising 0.35 0.45 0.6 V
Hysteresis 0.1 V
CURRENT SENSE INPUT (CS PIN)
VCS Current limit threshold 0.22 0.255 0.29 V
CS delay to output CS from 0 V to 1 V. Time for OUTA and OUTB to fall to 90% of VCC. Output load = 0 pF. 27 ns
Leading edge blanking time at CS 65 ns
CS sink impedance (clocked) Internal FET sink impedance 21 45 Ω
CURRENT LIMIT RESTART (RES PIN)
VRES RES threshold 1.9 2 2.2 V
Charge source current VRES = 1.5 V 14 18 21 µA
Discharge sink current VRES = 1 V 5 8 11 µA
SOFT-START (SS PIN)
ISS Charging current in normal operation VSS = 0 70 100 130 µA
Charging current during a hiccup mode restart VSS = 0 0.6 1 1.4 µA
Soft-stop current sink VSS = 2 V 70 100 130 µA
OSCILLATOR (RT1 AND RT2 PINS)
DT1 Dead-time 1 RRT2 = 15 kΩ 40 75 105 ns
DT2 Dead-time 2 RRT2 = 50 kΩ 250 ns
FSW1 Frequency 1 (at OUTA, half oscillator frequency) RRT1 = 30.1 kΩ, RRT2 = 30.1 kΩ, 178 200 222 kHz
FSW2 Frequency 2 (at OUTA, half oscillator frequency) RRT1 = 11 kΩ, RRT2 = 30.1 kΩ, 448 515 578 kHz
DC level 2 V
Input sync threshold 2.5 3 3.4 V
PWM CONTROLLER (COMP PIN)
Delay to output 65 ns
VPWM-OS SS to RAMP offset 0.7 1 1.2 V
Minimum duty cycle VSS = 0 V TJ = 25°C 0%
COMP open-circuit voltage VFB = 0 V 4.5 4.75 5 V
COMP short-circuit current VFB = 0 V, COMP = 0 V 0.5 1 1.5 mA
VOLTAGE FEED-FORWARD (RAMP PIN)
RAMP sink impedance (clocked) 5 20 Ω
ERROR AMPLIFIER
GBW Gain bandwidth 4 MHz
DC gain 75 dB
Input voltage VFB = COMP 1.22 1.245 1.27 V
COMP sink capability VFB = 1.5 V COMP = 1 V TJ = 25°C 5 13 mA
FB bias current 10 nA
MAIN OUTPUT DRIVERS (OUTA and OUTB Pins)
Output high voltage IOUT = 50 mA, (source) Vcc-0.5 Vcc-0.25 V
Output low voltage IOUT = 100 mA (sink) 0.2 0.5 V
Rise time CLOAD = 1 nF 17 ns
Fall time CLOAD = 1 nF 18 ns
Peak source current VVCC = 10 V 1.2 A
Peak sink current VVCC = 10 V 1.2 A
THERMAL SHUTDOWN
TSD Thermal shutdown threshold 165 °C
Thermal shutdown hysteresis 25 °C
(1) All limits are ensured. All electrical characteristics having room temperature limits are tested during production at TA = 25°C. All hot and cold limits are ensured by correlating the electrical characteristics to process and temperature variations and applying statistical process control.
(2) Typical specifications represent the most likely parametric norm at 25°C operation.

6.7 Typical Characteristics

LM25037 LM25037-Q1 30065103.png
Figure 1. VVCC and VREF vs VVIN
LM25037 LM25037-Q1 30065105.png
Figure 3. VVCC vs IVCC
LM25037 LM25037-Q1 30065107.gif
Figure 5. Feedback Amplifier Gain/Phase
LM25037 LM25037-Q1 30065110.png
Figure 7. Dead-Time vs RT2
LM25037 LM25037-Q1 30065112.png
Figure 9. Oscillator Frequency vs Temperature
LM25037 LM25037-Q1 30065114.png
Figure 11. Soft-Start and Restart Current vs Temperature
LM25037 LM25037-Q1 30065104.png
Figure 2. Start-Up Regulator Current (UVLO = 0)
LM25037 LM25037-Q1 30065106.png
Figure 4. VREF vs IREF
LM25037 LM25037-Q1 30065108.png
Figure 6. Oscillator Frequency vs RT1
LM25037 LM25037-Q1 30065111.png
Figure 8. VFB vs Temperature
LM25037 LM25037-Q1 30065113.png
Figure 10. Dead-Time vs Temperature