Optimum performance of high-side and low-side gate drivers cannot be achieved without taking due considerations during circuit board layout. The following points are emphasized:

1. Low-ESR and low-ESL capacitors must be connected close to the IC between VDD and VSS pins and between HB and HS pins to support high peak currents being drawn from VDD and HB during the turnon of the external MOSFETs.
2. To prevent large voltage transients at the drain of the top MOSFET, a low-ESR electrolytic capacitor and a good-quality ceramic capacitor must be connected between the MOSFET drain and ground (VSS).
3. To avoid large negative transients on the switch node (HS) pin, the parasitic inductances between the source of the top MOSFET and the drain of the bottom MOSFET (synchronous rectifier) must be minimized.
4. Grounding considerations:
   • The first priority in designing grounding connections is to confine the high peak currents that charge and discharge the MOSFET gates to a minimal physical area. This will decrease the loop inductance and minimize noise issues on the gate terminals of the MOSFETs. The gate driver must be placed as close as possible to the MOSFETs.
   • The second consideration is the high current path that includes the bootstrap capacitor, the bootstrap diode, the local ground referenced bypass capacitor, and the low-side MOSFET body diode. The bootstrap capacitor is recharged on a cycle-by-cycle basis through the bootstrap diode from the ground referenced VDD bypass capacitor. The recharging occurs in a short time interval and involves high peak current. Minimizing this loop length and area on the circuit board is important to ensure reliable operation.