SNVSB12B November   2017  – May 2021 LM73605-Q1 , LM73606-Q1

PRODUCTION DATA  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Device Comparison
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Characteristics
    7. 7.7 Switching Characteristics
    8. 7.8 System Characteristics
    9. 7.9 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Synchronous Step-Down Regulator
      2. 8.3.2  Auto Mode and FPWM Mode
      3. 8.3.3  Fixed-Frequency Peak Current-Mode Control
      4. 8.3.4  Adjustable Output Voltage
      5. 8.3.5  Enable and UVLO
      6. 8.3.6  Internal LDO, VCC_UVLO, and BIAS Input
      7. 8.3.7  Soft Start and Voltage Tracking
      8. 8.3.8  Adjustable Switching Frequency
      9. 8.3.9  Frequency Synchronization and Mode Setting
      10. 8.3.10 Internal Compensation and CFF
      11. 8.3.11 Bootstrap Capacitor and VBOOT-UVLO
      12. 8.3.12 Power-Good and Overvoltage Protection
      13. 8.3.13 Overcurrent and Short-Circuit Protection
      14. 8.3.14 Thermal Shutdown
    4. 8.4 Device Functional Modes
      1. 8.4.1 Shutdown Mode
      2. 8.4.2 Standby Mode
      3. 8.4.3 Active Mode
        1. 8.4.3.1 CCM Mode
        2. 8.4.3.2 DCM Mode
        3. 8.4.3.3 PFM Mode
        4. 8.4.3.4 Fault Protection Mode
  9. Layout
    1. 9.1 Layout Guidelines
      1. 9.1.1 Layout For EMI Reduction
      2. 9.1.2 Ground Plane
      3. 9.1.3 Optimize Thermal Performance
    2. 9.2 Layout Example
  10. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 Third-Party Products Disclaimer
      2. 10.1.2 Development Support
        1. 10.1.2.1 Custom Design With WEBENCH® Tools
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 Receiving Notification of Documentation Updates
    4. 10.4 Receiving Notification of Documentation Updates
    5. 10.5 Support Resources
    6. 10.6 Support Resources
    7. 10.7 Trademarks
    8. 10.8 Electrostatic Discharge Caution
    9. 10.9 Glossary

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Internal LDO, VCC_UVLO, and BIAS Input

The LM73605-Q1/6-Q1 an internal LDO, generating VCC voltage for control circuitry and MOSFET drivers. The VCC pin must have a 1-µF to 4.7-µF bypass capacitor placed as close as possible to the pin and properly grounded. Do not load the VCC pin or short it to ground during operation. Shorting VCC pin to ground during operation can damage the device.

The UVLO on VCC voltage, VCC_UVLO, turns off the regulation when VCC voltage is too low. It prevents the LM73605-Q1/6-Q1 from operating until the VCC voltage is enough for the internal circuitry. Hysteresis on VCC_UVLO prevents the part from turning off during power up if VIN droops due to input current demands. The LDO generates VCC voltage from one of the two inputs: the supply voltage VIN, or the BIAS input. When BIAS is tied to ground, the LDO input is VIN. When BIAS is tied to a voltage higher than 3.3 V, the LDO input is VBIAS. BIAS voltage must be lower than both VIN and 18 V.

The BIAS input is designed to reduce the LDO power loss. The LDO power loss is:

Equation 11. PLOSS_LDO = ILDO × (VIN_LDO – VOUT_LDO)

The higher the difference between the input and output voltages of the LDO, the more loss occurs to supply the same LDO output current. The BIAS input provides an option to supply the LDO with a lower voltage than VIN, to reduce the difference of the input and output voltages of the LDO and reduce power loss. For example, if the LDO current is 10 mA at a certain frequency with VIN = 24 V and VOUT = 5 V. The LDO loss with BIAS tied to ground is equal to 10 mA × (24 V – 3.27 V) = 207.3 mW, while the loss with BIAS tied to VOUT is equal to 10 mA × (5 – 3.27) = 17.3 mW.

The efficiency improvement is more significant at light and mid loads because the LDO loss is a higher percentage in the total loss. The improvements is more significant with higher switching frequency because the LDO current is higher at higher switching frequency. The improvement is more significant when VIN » VOUT because the voltage difference is higher.

Figure 8-6 and Figure 8-7 show efficiency improvement with bias tied to VOUT in a VOUT = 5 V and fSW = 2200 kHz application, in auto mode and FPWM mode, respectively.

GUID-10FF0B6F-517E-416B-86F7-55FB99F07C9C-low.gif
VOUT = 5 VfSW = 2200 kHzAuto Mode
Figure 8-6 LM73606-Q1 Efficiency Comparison With Bias = VOUT to Bias = GND in Auto Mode
GUID-2F054A4D-29FA-4602-97E6-85991330EEFA-low.gif
VOUT = 5 VfSW = 2200 kHzFPWM Mode
Figure 8-7 LM73606-Q1 Efficiency Comparison With Bias = VOUT to Bias = GND in FPWM Mode

TI recommends tying the BIAS pin to VOUT when VOUT is equal to or greater than 3.3 V and no greater than 18 V. Tie the BIAS pin to ground when not in use. A ceramic capacitor, CBIAS, can be used from the BIAS pin to ground for bypassing. If VOUT has high frequency noise or spikes during transients or fault conditions, a resistor (1 to 10 Ω) connected between VOUT to BIAS can be used together with CBIAS for filtering.

The VCC voltage is typically 3.27 V. When the LM73605-Q1/6-Q1 operating in PFM mode with frequency foldback, VCC voltage is reduced to 3.1 V (typical) to further decrease the quiescent current and improve efficiency at very light loads. Figure 8-8 shows an example of VCC voltage change with mode change.

GUID-29F32438-1077-4984-AE52-2F640A9E1B15-low.gif
VOUT = 5 VfSW = 500 kHzVIN = 12 V
Figure 8-8 VCC Voltage versus Load Current

VCC voltage has an internal UVLO threshold, VCC_UVLO. When VCC voltage is higher than VCC_UVLO rising threshold, the device is active and in normal operation if VEN > VEN_VOUT_H. If VCC voltage droops below VCC_UVLO falling threshold, the VOUT is shut down.