SBOSAF0A april   2023  – august 2023 LMH32401-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics: Gain = 2 kΩ
    6. 6.6 Electrical Characteristics: Gain = 20 kΩ
    7. 6.7 Electrical Characteristics: Both Gains
    8. 6.8 Electrical Characteristics: Logic Threshold and Switching Characteristics
    9. 6.9 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Switched Gain Transimpedance Amplifier
      2. 7.3.2 Clamping and Input Protection
      3. 7.3.3 ESD Protection
      4. 7.3.4 Differential Output Stage
    4. 7.4 Device Functional Modes
      1. 7.4.1 Ambient Light Cancellation (ALC) Mode
      2. 7.4.2 Power-Down Mode (Multiplexer Mode)
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Development Support
    2. 9.2 Documentation Support
      1. 9.2.1 Related Documentation
    3. 9.3 Receiving Notification of Documentation Updates
    4. 9.4 Support Resources
    5. 9.5 Trademarks
    6. 9.6 Electrostatic Discharge Caution
    7. 9.7 Glossary
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.4 Thermal Information

THERMAL METRIC(1) LMH32401-Q1(2) UNIT
RGT (VQFN)
16 PINS
RθJA Junction-to-ambient thermal resistance 56.3 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 67 °C/W
RθJB Junction-to-board thermal resistance 31.3 °C/W
ΨJT Junction-to-top characterization parameter 3.7 °C/W
ΨJB Junction-to-board characterization parameter 31.2 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 15.6 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.
(2) Thermal information is applicable to packaged parts only.