SLLS910A July   2008  – June 2016 ONET8501PB

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Description (continued)
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 DC Electrical Characteristics
    5. 7.5 AC Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 High-Speed Data Path
      2. 8.3.2 Band-gap Voltage and Bias Generation
    4. 8.4 Device Functional Modes
      1. 8.4.1 High-Speed Output Buffer
      2. 8.4.2 Rate Select
      3. 8.4.3 Loss-of-Signal Detection
    5. 8.5 Programming
      1. 8.5.1 2-Wire Interface and Control Logic
    6. 8.6 Register Maps
      1. 8.6.1  Register 0 (0x00) Mapping - Control Settings
      2. 8.6.2  Register 1 (0x01) Mapping - Input Threshold Adjust
      3. 8.6.3  Register 2 (0x02) Mapping - Preemphasis Adjust
      4. 8.6.4  Register 3 (0x03) Mapping - Output Amplitude Adjust
      5. 8.6.5  Register 4 (0x04) Mapping - Rate Selection Register A
      6. 8.6.6  Register 5 (0x05) Mapping - Rate Selection Register B
      7. 8.6.7  Register 6 (0x06) Mapping - Rate Selection Register C
      8. 8.6.8  Register 7 (0x07) Mapping - Rate Selection Register D
      9. 8.6.9  Register 8 (0x08) Mapping - LOS Assert Level Register A
      10. 8.6.10 Register 9 (0x09) Mapping - LOS Assert Level Register B
      11. 8.6.11 Register 10 (0x0A) Mapping - LOS Assert Level Register C
      12. 8.6.12 Register 11 (0x0B) Mapping - LOS Assert Level Register D
      13. 8.6.13 Register 14 (0x0E) Mapping - Selected Rate Setting (Read Only)
      14. 8.6.14 Register 15 (0x0F) Mapping - Selected LOS Level (Read Only)
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Receiving Notification of Documentation Updates
    2. 12.2 Community Resource
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VCC Supply voltage(2) –0.3 4 V
VDIN+, VDIN– Voltage at DIN+, DIN–(2) 0.5 4 V
VLOS, VCOC1, VCOC2, VDOUT+, VDOUT–, VDIS, VRATE0, VRATE1, VSDA, VSCK Voltage at LOS, COC1, COC2, DOUT+, DOUT–, DIS, RATE0, RATE1, SDA, SCK(2) –0.3 4 V
VDIN,DIFF Differential voltage between DIN+ and DIN– ±2.5 V
IDIN+, IDIN–, IDOUT+, IDOUT– Continuous current at inputs and outputs 25 mA
TLEAD Lead temperature 1.6mm (1/16 inch) from case for 10 s 260 °C
TA Characterized free-air operating temperature –40 100 °C
TJ,max Maximum junction temperature 125 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±750
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

MIN NOM MAX UNIT
VCC Supply voltage 2.95 3.3 3.6 V
TA Operating free-air temperature –40 100 °C
DIGITAL input high voltage 2 V
DIGITAL input low voltage 0.8 V

7.4 DC Electrical Characteristics

Over recommended operating conditions, outputs connected to a 50-Ω load, AMP1 = 0, AMP0 = 1 (Register 3) unless otherwise noted. Typical operating condition is at VCC = 3.3 V and TA = 25°C.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VCC Supply voltage 2.95 3.3 3.6 V
IVCC Supply current DIS = 0, CML currents included 50 63 mA
RIN Data input resistance Differential 100 Ω
ROUT Data output resistance Single-ended, referenced to VCC 50 Ω
LOS HIGH voltage ISOURCE = 50 µA with 10-kΩ pullup to VCC 2.4 V
LOS LOW voltage ISINK = 10 mA with 10-kΩ pullup to VCC 0.4 V

7.5 AC Electrical Characteristics

Over recommended operating conditions, outputs connected to a 50-Ω load, AMP1 = 0, AMP0 = 1 (Register 3) and maximum bandwidth unless otherwise noted. Typical operating condition is at VCC = 3.3 V and TA = 25°C.
PARAMETER TEST CONDITION MIN TYP MAX UNIT
f3dB-H –3-dB bandwidth default settings RATE1 = 1, RATE0 = 0 7.5 9 GHz
RATE1 = 1, RATE0 = 1 8.4
RATE1 = 0, RATE0 = 1 7.6
RATE1 = 0, RATE0 = 0 2.4
f3dB-L Low frequency –3-dB bandwidth With 330-pF COC capacitor 10 45 kHz
VIN,MIN Data input sensitivity PRBS31 pattern at 11.3 Gbps, BER < 10–12 5 9 mVpp
VOD-min ≥ 0.95 × VOD (output limited) 20 30
PRBS31 pattern at 8.5 Gbps, BER < 10–12, RATE1 = 1, RATE0 = 0 4
PRBS31 pattern at 4.25 Gbps, BER < 10–12, RATE1 = 1, RATE0 = 1 4
PRBS31 pattern at 2.125 Gbps, BER < 10–12, RATE1 = 0, RATE0 = 1 4
SDD11 Differential input return gain 0.01 GHz < f < 3.9 GHz –16 dB
3.9 GHz < f < 12.1 GHz See (1)
SDD22 Differential output return gain 0.01 GHz < f < 3.9 GHz –16 dB
3.9 GHz < f < 12.1 GHz See(1)
SCD11 Differential to common-mode conversion gain 0.01 GHz < f < 12.1 GHz –15 dB
SCC22 Common-mode output return gain 0.01 GHz < f < 7.5 GHz –13 dB
7.5 GHz < f < 12.1 GHz –9
A Small signal gain 29 34 dB
VIN,MAX Data input overload 2000 mVpp
DJ Deterministic jitter at 11.3 Gbps VIN = 15 mVpp, K28.5 pattern 3 8 pspp
VIN = 30 mVpp, K28.5 pattern 3 10
VIN = 2000 mVpp, K28.5 pattern 6 15
Deterministic jitter at 8.5 Gbps VIN = 30 mVpp, K28.5 pattern, RATE1 = 1, RATE0 = 0 4 pspp
Deterministic jitter at 4.25 Gbps VIN = 30 mVpp, K28.5 pattern, RATE1 = 1, RATE0 = 1 6 pspp
Deterministic jitter at 2.125 Gbps VIN = 30 mVpp, K28.5 pattern, RATE1 = 0, RATE0 = 1 8 pspp
RJ Random jitter VIN = 30 mVpp 1 psrms
VOD Differential data output voltage VIN > 30 mVpp, DIS = 0, AMP1 = 0, AMP0 = 0 250 350 450 mVpp
VIN > 30 mVpp, DIS = 0, AMP1 = 0, AMP0 = 1 500 650 800
VIN > 30 mVpp, DIS = 0, AMP1 = 1, AMP0 = 1 650 850 1050
DIS = 1 5 mVrms
VPREEM Output preemphasis step size 1 dB
tR Output rise time 20% to 80%, VIN > 30 mVpp 28 40 ps
tF Output fall time 20% to 80%, VIN > 30 mVpp 28 40 ps
CMOV AC common-mode output voltage PRBS31 pattern; AMP1 = 0, AMP0 = 1 7 mVrms
VTH LOW LOS assert threshold range min K28.5 pattern at 11.3 Gbps, LOSRNG = 0 15 mVpp
LOW LOS assert threshold range max K28.5 pattern at 11.3 Gbps, LOSRNG = 0 35
VTH HIGH LOS assert threshold range min K28.5 pattern at 11.3 Gbps, LOSRNG = 1 35 mVpp
HIGH LOS assert threshold range max K28.5 pattern at 11.3 Gbps, LOSRNG = 1 80
LOS threshold variation Versus temperature at 11.3 Gbps 1.5 dB
Versus supply voltage VCC at 11.3 Gbps 1
Versus data rate 1.5
LOS hysteresis (electrical) K28.5 pattern at 11.3 Gbps 2 4 6 dB
TLOS_AST LOS assert time 2.5 10 80 µs
TLOS_DEA LOS deassert time 2.5 10 80 µs
TDIS Disable response time 20 ns
(1) Differential Return Gain given by SDD11, SDD22 = –11.6 + 13.33 log10(f/8.25), f in GHz

7.6 Typical Characteristics

Typical operating condition is at VCC = 3.3 V, TA = 25°C, AMP1 = 0, AMP0 = 1 (Register 3), and maximum bandwidth unless otherwise noted.
ONET8501PB f_res_lls910.gif Figure 1. Frequency Response
ONET8501PB vo_vi_lls910.gif Figure 3. Transfer Function
ONET8501PB gain2_f_lls910.gif Figure 5. Differential Output Return Gain vs
Frequency
ONET8501PB dj_vi_lls910.gif Figure 7. Deterministic Jitter vs
Input Voltage
ONET8501PB adv_rs_lls910.gif Figure 9. LOS Assert/Deassert Voltage vs
Register Setting LOSRNG = 0
ONET8501PB hys_rs_lls910.gif Figure 11. LOS Hysteresis vs
Register Setting LOSRNG = 0
ONET8501PB bw_rs_lls910.gif Figure 2. Bandwidth vs Register Setting
ONET8501PB gain_f_lls910.gif Figure 4. Differential Input Return Gain vs
Frequency
ONET8501PB ber_vi_lls910.gif Figure 6. BIT-Error Ratio vs
Input Voltage (11.3 GBPS)
ONET8501PB rj_vi_lls910.gif Figure 8. Random Jitter vs
Input Voltage
ONET8501PB adv1_rs_lls910.gif Figure 10. LOS Assert/Deassert Voltage vs
Register Setting LOSRNG = 1
ONET8501PB hys1_rs_lls910.gif Figure 12. LOS Hysteresis vs
Register Setting LOSRNG = 1