SCDS167A May   2004  – July 2022 SN74CB3Q16211

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Description (continued)
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 Handling Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Electrical Characteristics
    5. 7.5 Switching Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  10. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

3 Description

The SN74CB3Q16211 device is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q16211 device provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.

Device Information(1)
PART NUMBER PACKAGE BODY SIZE
SN74CB3Q16211 TSSOP (56) 14.00 mm × 6.10 mm
TVSOP (56) 11.30 mm × 4.40 mm
SSOP (56) 18.40 mm × 7.49 mm
BGA MICROSTAR JUNIOR (56) 7.00 mm × 4.50 mm
(1) For all available packages, see the orderable addendum at the end of the data sheet.
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Terminal numbers shown are for the DGG, DGV, and DL packages.
Logic Diagram (Positive Logic)