SBVS151F December 2010 – April 2017 TLV705 , TLV705P
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
Voltage(2) | VIN | –0.3 | 6 | V |
VEN | –0.3 | 6 | V | |
VOUT | –0.3 | 6 | V | |
Maximum output current | IOUT | Internally limited | ||
Output short-circuit duration | Indefinite | |||
Temperature | Operating junction, TJ | –55 | 150 | °C |
Storage, Tstg | –55 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
Charged device model (CDM), per JEDEC specification JESD22-C101(2) | ±500 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
VIN | Input voltage | 2 | 5.5 | V | |
VOUT | Output voltage | 0.7 | 4.8 | V | |
IOUT | Output current | 0 | 200 | mA | |
TJ | Junction temperature | –40 | 125 | °C |
THERMAL METRIC(1) | TLV705 | UNIT | ||
---|---|---|---|---|
YFF, YFP (DSBGA) |
YFM (PicoStar) |
|||
4 PINS | 4 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 160 | 191.7 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 80 | 3.1 | °C/W |
RθJB | Junction-to-board thermal resistance | 90 | 36.5 | °C/W |
ψJT | Junction-to-top characterization parameter | 0.5 | 2.8 | °C/W |
ψJB | Junction-to-board characterization parameter | 78 | 26.5 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
VIN | Input voltage range | 2 | 5.5 | V | |||
VOUT | Output voltage range | 0.7 | 4.8 | V | |||
VO | DC output accuracy | –40°C ≤ TJ ≤ 125°C | 0 mA ≤ IOUT ≤ 200 mA, VOUT ≥ 1 V | –2% | ±0.5% | 2% | |
0 mA ≤ IOUT ≤ 200 mA, VOUT < 1 V | –20 | ±5 | 20 | mV | |||
ΔVOUT(ΔVIN) | Line regulation | VOUT(nom) + 0.5 V ≤ VIN ≤ 5.5 V | 0.05 | 5 | mV | ||
ΔVOUT(ΔIOUT) | Load regulation | 0 mA ≤ IOUT ≤ 200 mA | 1 | mV | |||
VDO | Dropout voltage(1) | VIN = 0.98 × VOUT(nom), IOUT = 200 mA | 145 | 250 | mV | ||
ICL | Output current limit | VOUT = 0.9 × VOUT(nom), TJ = 25°C | 260 | 400 | 550 | mA | |
IGND | Ground pin current | IOUT = 0 mA | 35 | 55 | μA | ||
IOUT = 200 mA | 315 | μA | |||||
ISHUTDOWN | Shutdown ground pin current | VEN ≤ 0.4 V, 2 V ≤ VIN ≤ 4.5 V | 1 | 1.8 | μA | ||
PSRR | Power-supply rejection ratio | VIN = 2.3 V, VOUT = 1.8 V, IOUT = 10 mA, f = 10 kHz |
80 | dB | |||
VIN = 2.3 V, VOUT = 1.8 V, IOUT = 10 mA, f = 1 MHz |
55 | dB | |||||
Vn | Output noise voltage | BW = 100 Hz to 100 kHz, IOUT = 10 mA |
VIN = 2.3 V, VOUT = 1.8 V | 26.6 | μVRMS | ||
VIN = 3.3 V, VOUT = 2.8 V | 26.7 | μVRMS | |||||
VIN = 3.8 V, VOUT = 3.3 V | 28.2 | μVRMS | |||||
BW = 10 Hz to 100 kHz, IOUT = 10 mA | VIN = 2.3 V, VOUT = 1.8 V | 30.7 | μVRMS | ||||
VIN = 3.3 V, VOUT = 2.8 V | 31.3 | μVRMS | |||||
VIN = 3.8 V, VOUT = 3.3 V | 34.1 | μVRMS | |||||
tSTR | Start-up time(2) | COUT = 1 μF, IOUT = 200 mA | 100 | μs | |||
VHI | Enable high (enabled) | 0.9 | VIN | V | |||
VLO | Enable low (disabled) | 0 | 0.4 | V | |||
IEN | EN pin current | VEN = 5.5 V | 0.01 | μA | |||
UVLO | Undervoltage lockout | VIN rising | 1.9 | V | |||
tSD | Thermal shutdown temperature | Shutdown, temperature increasing | 160 | °C | |||
Reset, temperature decreasing | 140 | °C | |||||
TJ | Operating junction temperature | –40 | 125 | °C |