SNIS210G April   2019  – November 2023 TMP61-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 TMP61-Q1 R-T table
      2. 7.3.2 Linear Resistance Curve
      3. 7.3.3 Positive Temperature Coefficient (PTC)
      4. 7.3.4 Built-In Fail Safe
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 AEC-Q200 Qualifications
    3. 8.3 Typical Application
      1. 8.3.1 Thermistor Biasing Circuits
        1. 8.3.1.1 Design Requirements
        2. 8.3.1.2 Detailed Design Procedure
          1. 8.3.1.2.1 Thermal Protection With Comparator
          2. 8.3.1.2.2 Thermal Foldback
        3. 8.3.1.3 Application Curve
    4. 8.4 Power Supply Recommendations
    5. 8.5 Layout
      1. 8.5.1 Layout Guidelines
      2. 8.5.2 Layout Examples
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Glossary
    6. 9.6 Electrostatic Discharge Caution
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
Voltage across the device 6 V
Junction temperature (TJ) Automotive Grade 1 (DEC, DYA QLPG package) -65  155 °C
Junction temperature (TJ) Automotive Grade 0 (ELPG package) –65 175 °C
Current through the device 450 µA
Storage temperature (Tstg) –65 175 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.