SLVSBQ8D December   2012  – October 2023 TPD4E1B06

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Ultra Low Leakage Current 0.5 nA (Maximum)
      2. 7.3.2 Transient Protection for 4 I/O Lines
      3. 7.3.3 I/O Capacitance 0.7 pF (Typical)
      4. 7.3.4 Bi-Directional (ESD) Protection Diode Array
      5. 7.3.5 Low ESD Clamping Voltage
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Signal Range on IO1, IO2, IO3, and IO4 Pins
        2. 8.2.2.2 Operating Frequency
      3. 8.2.3 Application Curves
    3. 8.3 Layout
      1. 8.3.1 Layout Guidelines
      2. 8.3.2 Layout Examples
  10. 9 Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

4 Revision History

Changes from Revision C (July 2014) to Revision D (October 2023)

  • Updated the numbering format for tables, figures, and cross-references throughout the documentGo
  • Updated the Package Information table to include package lead sizeGo
  • Updated the Feature Description sectionGo
  • Updated the Bi-directional (ESD) Protection Diode Array sectionGo

Changes from Revision B (May 2014) to Revision C (July 2014)

  • Changed 2 device names from TPD4E6B06 to TPD4E1B06 Go

Changes from Revision A (January 2013) to Revision B (May 2014)

  • Added DRL package to data sheet.Go
  • Changed IPP, peak pulse current from 3.5 A to 3.0 A.Go
  • Added the ESD Ratings tableGo
  • Added Recommended Operating Conditions table.Go
  • Changed Electrical Characteristics table to reflect operating conditions at 25 °C.Go
  • Added MIN VRWM value of –5.5 V.Go
  • Changed VCLAMP at IPP = 1 A from 10.5 V to 10.9 V. Go
  • Changed Line Capacitance TYP value from 1 pF to 0.7 pF.Go
  • Added Line Capacitance MAX value of 0.95 pF. Go
  • Changed ILEAK from MAX of 10 nA to 0.5 nA Go

Changes from Revision * (December 2012) to Revision A (January 2013)

  • Fixed "f" units typo from GHz to MHz for CL parameter in ELECTRICAL CHARACTERISTICS table.Go