SLDS182A August   2010  – July 2015 TPIC7218-Q1

PRODUCTION DATA.  

  1. 1 Device Overview
    1. 1.1 Features
    2. 1.2 Applications
    3. 1.3 Description
    4. 1.4 Functional Block Diagram
  2. 2 Revision History
  3. 3 Pin Configuration and Functions
  4. 4 Specifications
    1. 4.1  Absolute Maximum Ratings
    2. 4.2  ESD Ratings
    3. 4.3  Recommended Operating Conditions
    4. 4.4  Thermal Information
    5. 4.5  Input Port Electrical Characteristics
    6. 4.6  PWM Low-Side Driver Electrical Characteristics
    7. 4.7  Digital Low-Side Driver Electrical Characteristics
    8. 4.8  High-Side Driver Electrical Characteristics
    9. 4.9  K-Line Electrical Characteristics
    10. 4.10 Warning Lamp Electrical Characteristics
    11. 4.11 Power Supply Electrical Characteristics
    12. 4.12 SPI Electrical Characteristics
    13. 4.13 WL_LS Low-Side Switch Output Characteristics
    14. 4.14 Wheel-Speed High-Side Driver Characteristics
    15. 4.15 Wheel-Speed Low-Side Driver Characteristics
    16. 4.16 Wheel-Speed Output Characteristics
    17. 4.17 RST Output Characteristics
    18. 4.18 SPI Timing Electrical Characteristics
    19. 4.19 Power Supply Switching Characteristics
    20. 4.20 Wheel-Speed Counter Switching Characteristics
    21. 4.21 HS Driver Switching Characteristics
    22. 4.22 Digital Low-Side Driver Switching Characteristics
    23. 4.23 PWM Low-Side Driver Switching Characteristics
    24. 4.24 K-Line Switching Characteristics
    25. 4.25 Warning Lamp Switching Characteristics
    26. 4.26 Watchdog Switching Characteristics
    27. 4.27 Wheel Speed Interface Switching Characteristics
    28. 4.28 Wheel-Speed High-Side Driver Switching Characteristics
    29. 4.29 Wheel-Speed Output Switching Characteristics
    30. 4.30 Typical Characteristics
  5. 5 Detailed Description
    1. 5.1 Overview
    2. 5.2 Functional Block Diagram
    3. 5.3 Feature Description
      1. 5.3.1  Ground Connections
      2. 5.3.2  Charge Pump
      3. 5.3.3  Reference Current Generator
      4. 5.3.4  Wheel-Speed Reference, VREF
      5. 5.3.5  Faults Common To Most Functional Blocks
      6. 5.3.6  PWM Low-Side Drivers
      7. 5.3.7  Digital Low-Side Drivers
      8. 5.3.8  High-Side Drivers
        1. 5.3.8.1 High-Side Terminals: GPR, SPR, DPR, and HSPC
        2. 5.3.8.2 High-Side Terminals: GMR, SMR, DMR, and HSMC
      9. 5.3.9  Wheel-Speed Sensing
      10. 5.3.10 K-Line
      11. 5.3.11 Warning Lamp Drivers
      12. 5.3.12 Watchdog Operation
    4. 5.4 Device Functional Modes
      1. 5.4.1 Device Reset
    5. 5.5 Programming
      1. 5.5.1 Serial Peripheral Interface (SPI) Interface To Microcontroller
        1. 5.5.1.1 Summary and Description Of Control and Reporting Registers
    6. 5.6 Register Maps
      1. 5.6.1 SPI Registers
  6. 6 Application and Implementation
    1. 6.1 Application Information
    2. 6.2 Typical Application
      1. 6.2.1 Design Requirements
      2. 6.2.2 Detailed Design Procedure
        1. 6.2.2.1 Gatedrive circuit Motor FET
        2. 6.2.2.2 Gatedrive circuit Master Relay FET
      3. 6.2.3 Application Curves
  7. 7 Power Supply Recommendations
  8. 8 Layout
    1. 8.1 Layout Guidelines
      1. 8.1.1 Local Grounding Configuration
      2. 8.1.2 Board Level Grounding Configuration, TPIC7218-Q1 to System Connector
      3. 8.1.3 VCC3 Bypass Capacitor
      4. 8.1.4 VDD Bypass Capacitor
      5. 8.1.5 VBAT and CHP Capacitors
      6. 8.1.6 Multiple Plane Layer Assignments
      7. 8.1.7 Duplicate Pad Under TPIC7218-Q1 on All Non-Ground Plane Inner Layers
      8. 8.1.8 Flooding
    2. 8.2 Layout Example
  9. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Community Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  10. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

4 Specifications

4.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Supply voltage, VCC VDD, VIO –0.3 6.5 V
Input voltage, VIN WDin, CNT_EN, CNT_CLR, SI, SCLK, CSN, KRX, KTX, WL_LS, WLGx, VIO, HSMC, HSPC –0.3 6.5 V
WSSQx, WSSx, WSLSx –0.3 40 V
CHP –0.3 55 V
DMR,DPR –1 40 V
SMR,SPR, TEST –0.3 40 V
Supply voltage range, VBAT Load dump VBAT –1 40 V
Transient (2 ms) –1 40 V
Load dump voltage, VISOK(2) ISOK –0.3 40 V
Output voltage, VOUT Qx, WLQx, WSSQx –0.3 40 V
SO –0.3 (VCC + 0.3 ) V
nRST , WL_LS –0.3 6.5 V
GMR, GPR –1 55 V
REF voltage, VREF REF, VREF –0.3 6.5 V
Ground voltage, VGND PGNDx, GND –0.3 0.3 V
Drain current, IIN Continuous Q1, 2, 3, 4 0 5 A
Q5, 6, 7, 8, 0 3.5 A
WLQx 0 100 mA
nRST ±20 mA
Negative Transients Q1, 2, 3, 4 (10 ms) –5 0 A
Q5, 6, 7, 8, (10 ms) –5 0 A
WLQx (2 ms) –5 0 A
Input current, IIN WDIN, WLGx, CNT_EN, CNT_CLR, SI, SCLK, CSN, KRX, KTX, HSMC, HSPC ±20 mA
SPR, SMR –10 10
Output current, IOUT SO ±20 mA
REF current, IREF REF ±20 mA
Short-circuit current limit, ISC ISOK 1000 mA
Current with 510-Ω sense, IISOK ISOK –100 113.5 mA
Supply current, ICC VDD –20 50 mA
VBAT (including WSSPx current limit thresholds) –20 620 mA
Repetitive avalanche energy, EAR_DQ150
(TJ = 150°C)		 Q1, 2, 3, 4 50 mJ
Repetitive avalanche energy, EAR_PQ150
(TJ = 150°C)		 Q5, 6, 7, 8 30 mJ
ISOK clamp energy, EClamp ISOK 20 mJ
Operating virtual-junction temperature, TJ –40 175 °C
Tstg Storage temperature range –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) This module survives double-battery jump-start conditions in typical application for 10 minutes duration.

4.2 ESD Ratings

VALUES UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per AEC Q100-002(1) WLQx, Qx, VBAT, ISOK, DMR, SMR, WSSx, WSLSx, WSPx, WSSQx, DPR, SPR (to GND) ±4000 V
Other pins ±2000
Charged device model (CDM), per AEC Q100-011 Corner pins (WSP2, WSP1, SPR, CHP
SO, WSSQ1, WSLS1, and WSLS2)		 ±750
Other pins ±500
(1) AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

4.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VBAT Supply voltage, battery VBAT 6 20 V
VDD Supply voltage VDD 4.5 5.5 V
VIO_3.3V Supply voltage I/O 3.3V VIO is a 3.3-V externally supplied power 2.8 3.6 V
VIO_5V Supply voltage I/O 5V VIO is a 5-V externally supplied power 4.5 5.5 V
VIN Input voltage WDIN, CNT_EN, CNT_CLR, SI, SCLK, CSN, nRST, HSMC, HSPC, KTX, WLGx 0 VIO + 0.5 V
VOUT Output voltage Qx, WLQx 0 VBAT V
TA Operating ambient temperature –40 125 °C

4.4 Thermal Information

THERMAL METRIC(1) TPIC7218-Q1 UNIT
PFP (HTQFP)
80 PINS
RθJA Junction-to-ambient thermal resistance 27.2 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 8.9 °C/W
RθJB Junction-to-board thermal resistance 11.1 °C/W
ψJT Junction-to-top characterization parameter 0.3 °C/W
ψJB Junction-to-board characterization parameter 11 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 0.3 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

4.5 Input Port Electrical Characteristics

VBAT = 6 V to 20 V, VDD = 4.5 V to 5.5 V, over operating free-air temperature range (unless otherwise noted)
PARAMETER MIN TYP MAX UNIT
VIH_3.3V Input high voltage (3.3-V compatible) WDIN, CNT_CLR, CNT_EN, HSMC, HSPC, WLGx, CSN, SI, SCLK, nRST 2.2 V
VIL_3.3V Input low voltage (3.3-V compatible) WDIN, CNT_CLR, CNT_EN, HSMC, HSPC, WLGx, CSN, SI, SCLK, nRST 0.8 V
Vhys_3.3V Input voltage threshold hysteresis (5-V compatible) WDIN, CNT_CLR, CNT_EN, HSMC, HSPC, WLGx, CSN, SI, SCLK, nRST 300 mV
VIH_5V Input high voltage (5-V compatible) WDIN, CNT_CLR, CNT_EN, HSMC, HSPC, WLGx, CSN, SI, SCLK, nRST 3.5 V
VIL_5V Input low voltage (5-V compatible) WDIN, CNT_CLR, CNT_EN, HSMC, HSPC, WLGx, CSN, SI, SCLK, nRST 1 V
Vhys_5V Input voltage threshold hysteresis (5-V compatible) WDIN, CNT_CLR, CNT_EN, HSMC, HSPC, WLGx, CSN, SI, SCLK, nRST 300 mV
IPD Pin pulldown current,
with VIN = VDD (max)(5.5 V) to VIL (min)		 WDIN, CNT_CLR, CNT_EN, HSMC, HSPC, WLGx, SI, SCLK, nRST 5 20 μA
Ipu_csn CSN pullup current –20 –5 μA
IPD_SMR SMR pin input current –1 0 1 mA

4.6 PWM Low-Side Driver Electrical Characteristics

VBAT = 6 V to 20 V, VDD = 4.5 V to 5.5 V, over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Ron_PWMx On resistance 150°C junction temperature,
6 V ≤ VBAT ≤ 20 V		 0.3 Ω
Ilim_PWMx Current limit 5 A
TA = –40°C 5.5 A
Isink_PWMx Sink current Qx between 1 V and 20 V 10 60 μA
Ileak_PWMx Drain leakage current VBAT = 0, VDD = 0 1 μA
Tsd_PWMx Thermal shutdown junction temperature 185 215 °C
VolvtDIPWMx Open load comparator threshold voltage 1.84 2.16 V
Vcl_PWMx Active clamp voltage 40 50 V
Vbvdss_PWMx Max BVDSS voltage without active clamp 50 V
Ineg_PWMx Maximum negative current for 10 ms –5 A

4.7 Digital Low-Side Driver Electrical Characteristics

VBAT = 6 V to 20 V, VDD = 4.5 V to 5.5 V, over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Ron_DLSx On resistance 150°C junction temperature,
6 V ≤ VBAT ≤ 20 V		 0.2 Ω
Ilim_DLSx Current limit 6 A
Isink_DLSx Sink current Qx output between 1 V and 20 V 10 60 μA
Ileak_DLSx Drain leakage current VBAT = 0, VDD = 0 1 μA
Tsd_DLSx Thermal shutdown junction temperature 185 215 °C
Volvt_DLSx Open load comparator threshold 1.84 2.16 V
Vcl_DLSx Active clamp voltage 40 50 V
Vbvdss_DLSx Max BVDSS voltage without active clamp 50 V
Ineg_DLSx Maximum negative current for 10 ms –5 A

4.8 High-Side Driver Electrical Characteristics

VBAT = 6 V to 20 V, VDD = 4.5 V to 5.5 V, over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
IDMR/IDPR Overcurrent threshold current 60 75 90 μA
VSTG On-state short-to-ground detection voltage 1.6 2 2.4 V
ILCdet Leakage current in SMR pin 3 5 7 mA
Ileak_SMR Leakage current on SMR 0 ≤ SMR ≤ 20 V,
6 V ≤ VBAT ≤ 20 V		 135 μA
IDark_DMR Dark current 0 ≤ DMR ≤ 20 V,
VBAT = 0, VDD ≤ 0 		2.5 μA
VFGMR/
VFGPR		 Voltage threshold FGMR in GMR pin
and FGPR in GPR pin		 1.6 2 2.4 V
Vgs_clamp Voltage clamp between GMR-SMR and GPR-SPR pins 16 20 V
VON Output on voltage for GMR and GMR (each are turned on individually) 6 V < VBAT < 7 V VBAT + 5 VBAT + 15 V
7 V ≤ VBAT < 10 V VBAT + 7 VBAT + 15
10 V ≤ VBAT < 20 V VBAT + 10 VBAT + 15
7 V ≤ VBAT < 10 V VBAT + 7 VBAT + 15
10 V ≤ VBAT < 20 V VBAT + 10 VBAT + 15

4.9 K-Line Electrical Characteristics

VBAT = 6 V to 20 V, VDD = 4.5 V to 5.5 V, over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VIL_tx KTX input low voltage threshold 0.3 × VDD V
VIH_tx KTX input high voltage threshold 0.7 × VDD V
Ipu_tx KTX pullup current –40 –2 μA
VOL_rx KRX output low voltage threshold 0.2* × VDD V
VOH_rx KRX output high voltage threshold 0.8 × VDD V
Tlim Thermal shutdown temperature 185 215 C
Vhys_kln Thermal shutdown hysteresis 20 30 C
VIL_iso ISOK input low voltage threshold 0.4 × VBAT V
VIH_iso ISOK input high voltage threshold 0.7 × VBAT V
Vhys_iso Input hysteresis Vhys_iso = VIH_iso – VIL_iso 0.05 × VBAT 0.1 × VBAT V
ISC_iso Short-circuit current limit 50 1000 mA
VOL_iso Output low voltage 0.1 × VBAT V
VOH_iso Output high voltage 0.95 × VBAT V
Ileak_isok Drain leakage current VBAT = 0, VDD = 0, ISOK = 12 V 6 μA

4.10 Warning Lamp Electrical Characteristics

VBAT = 6 V to 20 V, VDD = 4.5 V to 5.5 V, over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Ron_WLQx On resistance 150°C junction temperature 4 Ω
Ilim_WLQx Current limitation 250 mA
Tsd_WLQx Thermal shutdown temperature 185 215 C
Thys_WLQx Thermal shutdown hysteresis 20 30 C
Isink_WLQx Sink current WLQx output between 1 V and 20 V 10 60 μA
Ileak_WLQx Drain leakage current VBAT = 0, VDD = 0 1 μA
Volvt_WLQx Open load comparator threshold voltage 2.3 2.7 V
Vcl_WLQx Active clamp voltage 40 50 V
Vbvdss_WLQx Max BVDSS voltage without active clamp 50 V
Ineg_WLQx Maximum negative current for 2 ms 5 A

4.11 Power Supply Electrical Characteristics

VBAT = 6 V to 20 V, VDD = 4.5 V to 5.5 V, over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
IVDD Current consumption on VDD 20 mA
IVBAT Current consumption on VBAT 10 mA
VurvlVDD Undervoltage shutdown voltage 4.5 4.625 4.75 V
VuvrhVDD Undervoltage reset threshold for microcontroller 4.6 4.725 4.85 V
VVDD_uvr_hys Undervoltage recovery hysteresis 50 mV
VrstVDD Undervoltage reset voltage 3 V
VuvVBAT Undervoltage shutdown 5.2 5.6 6 V
VovVBAT Overvoltage shutdown 27 29 31 V
VREF Band-gap reference voltage 1.25 V
External reference resistor accuracy (chip resistor) RREF = 10 kΩ 1%
External predriver capacitor tolerance CCHP = 100 nF 20%
External load capacitor for internally used VCC3 regulator 100 pF < CVCC3 < 10 nF 20%

4.12 SPI Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VOH SO output threshold high voltage VDD –1 V
VOL SO output threshold low voltage 0.4 V

4.13 WL_LS Low-Side Switch Output Characteristics

VBAT = 6 V to 20 V, VDD = 4.5 V to 5.5 V, over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VOL WL_LS output low voltage IOL = 20 mA , WDSTAT = ‘0’ 0.4 V

4.14 Wheel-Speed High-Side Driver Characteristics

VBAT = 6 V to 20 V, VDD = 4.5 V to 5.5 V, over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Ron_WSPx On resistance 150°C junction temperature 10 30 Ω
Ileak_WSPx Leakage current Switch disabled, VBAT = 18 V, 10 μA
Irvleak_WSPx Reverse polarity leakage current Switch disabled, VBAT open, VWSPx=18 V 100 μA
Ioc_WSPx Short to ground current limitation 50 150 mA
Vclamp_WSPx Maximum output voltage 8 12 15 V
CLOAD_WSPx Maximum capacitive load 10 nF

4.15 Wheel-Speed Low-Side Driver Characteristics

VBAT = 6 V to 20 V, VDD = 4.85 V to 5.5 V, over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Ron_WSLSx On resistance 150°C junction temperature 2 10 Ω
Ileak_WSLSx Leakage current Switch disabled,
VBAT = 18 V,VWSLSx = 18V		 200 μA
Ileak_WSSx Leakage current Switch disabled,
VBAT = 18 V,VWSLSx = 18V		 200 μA
VREF Reference voltage used to set WSS threshold detection 1 3.3 V
VTHRESH4 100% threshold detection VREF / RLOAD (Intelligent Sensor) VWSSX – VWSLSX –10% 1 × VREF 10% V
VTHRESH3 50% threshold detection VREF / RLOAD (Intelligent Sensor) VWSSX – VWSLSX –10% 1 × VREF 10% V
100% threshold detection VREF / RLOAD (Active Sensor) –10% 0.5 × VREF 10%
VTHRESH2 25% threshold detection VREF / RLOAD (Intelligent Sensor)VWSSX – VWSLSX VWSSX – VWSLSX –10% 0.25 × VREF 10% V
50% threshold detection VREF / RLOAD(Active Sensor) –10% 0.5 × VREF 10%
VTHRESH1 11.25% threshold detection VREF / RLOAD (Intelligent Sensor) VWSSX – VWSLSX –20% 0.1125 × VREF 20% V
22.5% threshold detection VREF / RLOAD (Active Sensor) –20% 0.225 × VREF 20%
VWSSthresh VTHRESH2 = VTHRESH3 = VTHRESH4 = 5 kHz, VTHRESH1= Measured 3 WSS channels switching at 5 kHz 40 dB

4.16 Wheel-Speed Output Characteristics

VBAT = 6 V to 20 V, VDD = 4.5 V to 5.5 V, over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Ron_WSSQx On resistance 150°C junction temperature 5 15 Ω
Ilim_WSSQx Current limitation 50 mA
Ileak_WSSQx Drain leakage current VWSSQx = 13.5 V 20 μA
Volvt_WSSQx Open load/Short to ground comparator threshold voltage 1.84 2 2.16 V
Cload_WSSQx Capacitive Load (Inductive load is not supported) 22 nF

4.17 RST Output Characteristics

VBAT = 6 V to 20 V, VDD = 4.5 V to 5.5 V, over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VOL RST output low voltage IOL = 1.6 mA 0.4 V
1 V < VDD < VurvlVDD, IOL = VDD/10 kΩ 0.4 V

4.18 SPI Timing Electrical Characteristics

VBAT = 6 V to 20 V, VDD = 4.5 V to 5.5 V, over operating free-air temperature range (unless otherwise noted) (see Figure 4-1)
MIN NOM MAX UNIT
fSPI SPI operation frequency 4 8 MHz
tSCLK SCLK clock period 125 ns
T(WH) SCLK clock high time 62.5 ns
T(WL) SCLK clock low time 62.5 ns
tSU(lead) Setup time from falling edge of CSN to rising edge of SCLK 62.5 ns
tSU(lag) Setup time from falling edge of SCLK to rising edge of CSN 62.5 ns
tpd(SDOEN) Propagation delay from falling edge of CSN to SO valid 50 ns
tpd(SDODIS) Propagation delay from rising edge of CSN to SO Hi-Z state 50 ns
tpd(valid) Propagation delay from rising edge SCLK to SO 0.2 V1 < SO < 0.8 V1,
CL = 200 pF		 50 ns

4.19 Power Supply Switching Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tRST Reset response time 5 µs
trst_delay Delay time for reset from low to high (minimum reset hight) 53 76.5 100 ms
tVovVBAT Overvoltage blanking time 280 400 520 µs
tVuvVBAT Undervoltage blanking time 280 400 520 µs

4.20 Wheel-Speed Counter Switching Characteristics

VBAT = 6 V to 20 V, VDD = 4.5 V to 5.5 V, over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tcnt_clr CNT_CLR deglitcher duration 4.2 7.8 μs
tcnt_en CNT_EN deglitcher duration 4.2 7.8 μs

4.21 HS Driver Switching Characteristics

VBAT = 6 V to 20 V, VDD = 4.5 V to 5.5 V, over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tFovdet Overvoltage detection time 280 400 520 µs
tGPRact Overvoltage activation time 320 460 600 ms
tOCdet Overcurrent detection time 560 800 1040 µs
tSTG Short to ground detection time 70 100 130 µs
tHSDUVBAT HSD deglitcher time for VBAT undervoltage 1.3 2.5 µs
tC1deg Comparator deglitcher time 4.2 7.8 µs
tC2deg
tLCdet Leakage current detection time in SMR pin 140 200 260 µs
tDark_DMR Time to reach dark current After VBAT = 0 V and VDD = 0 300 µs
tSTGMR/
tSTGPR		 Turnon masking time(1) 5 8 ms
tON1 Turnon time GMR = 8 nF –6 V < VBAT < 7 V, GPR > VBAT + 4 0.8 ms
–7 V ≤ VBAT < 10 V, GPR > VBAT + 6 1.3
–10 V ≤ VBAT < 20 V, GPR > VBAT + 9 1.5
tON2_P Turnon time GPR = 16 nF,
GMR,
GPR turn ON together		 –6 V < VBAT < 7 V, GPR > VBAT + 4 2 ms
–7 V ≤ VBAT < 10 V, GPR > VBAT + 6 2.8
–10 V ≤ VBAT < 20 V, GPR > VBAT + 9 3.3
tON2_S Turnon time GPR = 16 nF,
GPR turnon only		 –6 V < VBAT < 7 V, GPR > VBAT + 4 1.1 ms
–7 V ≤ VBAT < 10 V, GPR > VBAT + 6 1.5
–10 V ≤ VBAT < 20 V, GPR > VBAT + 9 1.8
(1) This deglitcher applies only during the turnon time of GMR/GPR pins. During this masking time, no overcurrent conditions are reported.

4.22 Digital Low-Side Driver Switching Characteristics

VBAT = 6 V to 20 V, VDD = 4.5 V to 5.5 V, over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tosoff_DLSx Open load comparator deglitcher 140 200 260 μs
tr/tf_DLSx Rise time/fall time From 10% to 90% 10 50 μs
td_on_DLSx Turnon/turnoff delay time From CSN going high to digital LSD turning off or turning on 70 μs
td_off_DLSx
toff_blank_DLSx Blank time before output shutdown in current limitation 140 200 260 μs
toff_tmp_DLSx Blank time before output shutdown in overtemperature 140 200 260 μs

4.23 PWM Low-Side Driver Switching Characteristics

VBAT = 6 V to 20 V, VDD = 4.5 V to 5.5 V, over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tosoff_PWMx Open load comparator deglitcher time 140 200 260 μs
tr/tf_PWMx Rise time/fall time From 10% to 90% 30 500 ns
td_on_PWMx Turnon delay time From CSN going high to PWM LSD turning off 10 μs
td_off_PWMx Turnoff delay time From CSN going high to PWM LSD turning off 2.25 μs
toff_blank_PWMx Blank time before output shutdown in case of current limitation 5 6 7 μs
toff_tmp_PWMx Blank time before output shutdown during overtemperature 140 200 260 μs

4.24 K-Line Switching Characteristics

VBAT = 6 V to 20 V, VDD = 4.5 V to 5.5 V, over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ft_rx ft_tx ft_iso Transmission frequency KRX, KTX, ISOK,
RISO = 510 Ω, CISO = 1.3 nF		 50 100 kHz
tfall_tx_iso Fall time (20% to 80% of ISOK ) RISO = 510 Ω to VBAT,
CISO = 10 nF to GND		 2 μs
trise_tx_iso Rise time (80% to 20% of ISOK) RISO = 510 Ω to VBAT,
CISO = 10 nF to GND		 15 μs
tpd_tx_iso ISOK propagation delay High to low,
RISO = 510 Ω, CISO = 10 nF		 6 μs
Low to high,
RISO = 510 Ω, CISO = 10 nF		 6
toff_iso_rx Turnoff propagation delay time RISO = 510 Ω, CISO = 10 nF 17 μs
toff_tx_iso
ton_iso_rx Turnon propagation delay time RISO = 510 Ω, CISO = 10 nF 4 μs
ton_tx_iso
toff_kln Blank time for overtemperature(1) 140 200 260 μs
ton_kln
toff_isok Cumulative blank time before shutdown for overcurrent 15 20 25 μs
(1) toff_kln is the deglitcher time for K-Line to turnoff, and ton_kln is the deglitcher time for K-Line to turn on from shutdown.

4.25 Warning Lamp Switching Characteristics

VBAT = 6 V to 20 V, VDD = 4.5 V to 5.5 V, over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tosoff_WLQx Open-load comparator deglitcher time 140 200 260 μs
tr_WLQx Rise time/fall time From 10% to 90% 60 μs
tf_WLQx
td_on_WLQx Turnon/turnoff delay time 25 μs
td_off_WLQx
toff_blank_WLQx Blank time for overcurrent /short battery sensing 8 10 12 μs
toff_tmp_WLQx
ton_tmp_WLQx Blank time in case of overtemperature 140 200 260 μs

4.26 Watchdog Switching Characteristics

VBAT = 6 V to 20 V, VDD = 4.5 V to 5.5 V, over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
TWD Watchdog window Upper window (WDH<1:0>) –10% programmable 10% ms
Lower window (WDL<1:0>) 10% programmable 10%
Out-of-range window (2 × WDH<1:0>) 10% programmable 10%
TWD_PULSE Watchdog induced reset pulse Watchdog out-of-range (counter stays at 000) 1 1.5 2 ms

4.27 Wheel Speed Interface Switching Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
trise_WSPx Propagation delay from rising edge of CSN to the rising and falling edge of WSPx. 20 mA load, Cload = 10 nF 100 μs
tfall_WSP
trise_WSLSx Propagation delay from rising edge of CSN to rising and falling edge of WSLSx 50-mA load 50 μs
tfall_WSLSx
trise_WSSQx Propagation delay from rising edge of CSN to rising and falling edge of WSSQx 50 mA load, C = 200 pF 50 μs
tfall_WSSQx

4.28 Wheel-Speed High-Side Driver Switching Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tdelay_WSPx Delay time for fault reporting 80 100 120 μs

4.29 Wheel-Speed Output Switching Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Tdelay_WSSQx Delay time for overcurrent fault reporting 15 20 25 µs
Delay time for open load fault reporting 140 200 260 µs
TPIC7218-Q1 spiinterface_inputtim_lds174.gifFigure 4-1 SPI Interface Input Timing

4.30 Typical Characteristics

TPIC7218-Q1 D002_SLDS182.gif
Figure 4-2 Current Consumption from VBAT vs Temperature
TPIC7218-Q1 D004_SLDS182.gif
Figure 4-4 VCC3 Regulator Load Regulation Across Temperature (VDD = 4.5 V)
TPIC7218-Q1 D003_SLDS182.gif
Figure 4-3 Current Consumption from VDD vs Temperature