SLVS914E April   2009  – April 2024 TPS22960

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Typical DC Characteristics
    8. 5.8 Typical Switching Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Output Slew Rate (SR) Control
      2. 7.3.2 Quick Output Discharge (QOD)
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 ON/OFF Control
      2. 8.1.2 Input Capacitor
      3. 8.1.3 Output Capacitor
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Inrush Current
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Integrated dual-load switch
  • Input voltage range: 1.62V to 5.5V
  • Low ON-state resistance
    • rON = 342mΩ at VIN = 5.5V
    • rON = 435mΩ at VIN = 3.3V
    • rON = 523mΩ at VIN = 2.5V
    • rON = 737mΩ at VIN = 1.8V
  • 500mA maximum continuous switch current
  • Low quiescent current and shutdown current
  • Controlled switch output rise time:
    75µs or 660μs
  • Integrated quick output discharge transistor
  • ESD performance tested per JESD 22
    • 2000V human body model
      (A114-B, Class II)
    • 1000V charged-device model (C101)
  • 8-pin SOT (DCN) package: 3mm × 3mm
  • 8-pin UQFN (RSE) package: 1.5mm × 1.5mm