SLVSET8A May   2019  – August 2019 TPS2596

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
    1.     Device Images
      1.      Simplified Schematic
      2.      TPS25963x 1KV EFT Response
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
    1.     Pin Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Switching Characteristics
    8. 7.8 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Undervoltage Protection (UVP) and Undervoltage Lockout (UVLO)
      2. 8.3.2 Overvoltage Protection
        1. 8.3.2.1 Overvoltage Lockout
        2. 8.3.2.2 Overvoltage Clamp
      3. 8.3.3 Inrush Current, Overcurrent and Short Circuit Protection
        1. 8.3.3.1 Slew Rate and Inrush Current Control (dVdt)
        2. 8.3.3.2 Active Current Limiting
        3. 8.3.3.3 Short-Circuit Protection
      4. 8.3.4 Analog Load Current Monitor (IMON)
      5. 8.3.5 Overtemperature Protection (OTP)
      6. 8.3.6 Fault Indication
    4. 8.4 Device Functional Modes
      1. 8.4.1 Enable and Fault Pin Functional Mode 1: Single Device, Self-Controlled
      2. 8.4.2 Enable and Fault Pin Functional Mode 2: Single Device, Host-Controlled
      3. 8.4.3 Enable and Fault Pin Functional Mode 3: Multiple Devices, Self-Controlled
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Precision Current Limiting and Protection for White Goods
      2. 9.2.2 Design Requirements
      3. 9.2.3 Detailed Design Procedure
        1. 9.2.3.1 Programming the Current-Limit Threshold: RILM Selection
        2. 9.2.3.2 Undervoltage and Overvoltage Lockout Set Point
        3. 9.2.3.3 Setting Output Voltage Ramp Time (TdVdT)
          1. 9.2.3.3.1 Case 1: Start-Up Without Load. Only Output Capacitance COUT Draws Current
          2. 9.2.3.3.2 Case 2: Start-Up With Load. Output Capacitance COUT and Load Draw Current
      4. 9.2.4 Support Component Selection: RFLT and CIN
      5. 9.2.5 Application Curves
    3. 9.3 System Examples
      1. 9.3.1 Current Limiting and Overvoltage Protection and for Energy Meter Power Rails
      2. 9.3.2 Precision Current Limiting and Protection in Appliances
  10. 10Power Supply Recommendations
    1. 10.1 Transient Protection
    2. 10.2 Output Short-Circuit Measurements
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Community Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Case 2: Start-Up With Load. Output Capacitance COUT and Load Draw Current

When the load draws current during the turnon sequence, there is additional power dissipated. Considering a resistive load during start-up RL(SU), load current ramps up proportionally with increase in output voltage during TdVdT time. Equations 12 to 15 show the average power dissipation in the internal FET during charging time due to resistive load.

Equation 12. TPS2596 tps2595xx-equation-10.gif

Total power dissipated in the device during start-up is Equation 13.

Equation 13. TPS2596 tps2595xx-equation-11.gif

Total current during start-up is given by Equation 14.

Equation 14. TPS2596 tps2595xx-equation-12.gif

If ISTARTUP > ILIMIT, the device limits the current to ILIMIT and the current-limited charging time is determined by Equation 15.

Equation 15. TPS2596 tps2595xx-equation-13.gif

The power dissipation, with and without load, for selected start-up time must not exceed the shutdown limits as shown in Figure 55.

TPS2596 D023.gifFigure 55. Thermal Shutdown Limit Plot

For the design example under discussion, select ramp-up capacitor CdVdt = 22000 pF. The default slew rate for CdVdt = 22000 pF is 1.9 mV/µs. With slew rate of 1.9 mV/µs, the ramp-up time TdVdt for 12 V input is 6.3 ms.

The inrush current drawn by the load capacitance COUT during ramp-up using Equation 16.

Equation 16. TPS2596 Apps-section-equation-10.gif

The inrush power dissipation is calculated using Equation 17.

Equation 17. TPS2596 Apps-section-equation-11.gif

For 1.14 W of power loss, the thermal shutdown time of the device must not be less than the ramp-up time TdVdt to avoid the false trip at the maximum operating temperature. Figure 55 shows the thermal shutdown limit at TA = 85 °C, for 1.14 W of power, the shutdown time is infinite. Therefore, it is safe to use 6.3 ms as the start-up time without any load on the output.

The additional power dissipation when a 10-Ω load is present during start-up is calculated using Equation 18.

Equation 18. TPS2596 Apps-section-equation-12.gif

The total device power dissipation during start-up is given in Equation 19.

Equation 19. TPS2596 Apps-section-equation-13.gif

Figure 55 shows TA = 85 °C and the thermal shutdown time for 2.24 W is approximately 2000 ms, which increases the margins further for shutdown time and ensures successful operation during start up and steady state conditions.

When COUT is large, there is a need to decrease the power dissipation during start-up. This can be done by increasing the value of the CdVdt capacitor.