SBVS273A June 2016 – September 2016 TPS3779-Q1 , TPS3780-Q1
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
Voltage | VDD | –0.3 | 7 | V |
OUT1, OUT2 (TPS3779-Q1 only) | –0.3 | VDD + 0.3 | ||
OUT1, OUT2 (TPS3780-Q1 only) | –0.3 | 7 | ||
SENSE1, SENSE2 | –0.3 | 7 | ||
Current | OUT1, OUT2 | ±20 | mA | |
Temperature | Operating junction, TJ(2) | –40 | 125 | °C |
Storage, Tstg | –65 | 150 |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per AEC Q100-002(1) | ±2000 | V |
Charged-device model (CDM), per AEC Q100-011 | ±500 |
MIN | NOM | MAX | UNIT | |||
---|---|---|---|---|---|---|
Power-supply voltage | 1.5 | 5.5 | V | |||
Sense voltage | SENSE1, SENSE2 | 0 | 5.5 | V | ||
Output voltage (TPS3779-Q1 only) | OUT1, OUT2 | 0 | VDD + 0.3 | V | ||
Output voltage (TPS3780-Q1 only) | OUT1, OUT2 | 0 | 5.5 | V | ||
RPU | Pullup resistor (TPS3780-Q1 only) | 1.5 | 10,000 | kΩ | ||
Current | OUT1, OUT2 | –5 | 5 | mA | ||
CIN | Input capacitor | 0.1 | µF | |||
TJ | Junction temperature | –40 | 25 | 125 | °C |
THERMAL METRIC(1) | TPS3779-Q1, TPS3780-Q1 | UNIT | |
---|---|---|---|
DBV (SOT-23) | |||
6 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 193.9 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 134.5 | °C/W |
RθJB | Junction-to-board thermal resistance | 39.0 | °C/W |
ψJT | Junction-to-top characterization parameter | 30.4 | °C/W |
ψJB | Junction-to-board characterization parameter | 38.5 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | N/A | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
VDD | Input supply range | 1.5 | 5.5 | V | |||
V(POR) | Power-on-reset voltage(1) | VOL (max) = 0.2 V, IOL = 15 µA | 0.8 | V | |||
IDD | Supply current (into VDD pin) | VDD = 3.3 V, no load | 2.09 | 5.80 | µA | ||
VDD = 5.5 V, no load | 2.29 | 6.50 | |||||
VIT+ | Positive-going input threshold voltage | V(SENSEx) rising | 1.194 | V | |||
–1% | 1% | ||||||
VIT– | Negative-going input threshold voltage | V(SENSEx) falling | TPS37xxA-Q1 (0.5% hysteresis) |
1.188 | V | ||
TPS37xxB-Q1 (5% hysteresis) |
1.134 | ||||||
TPS37xxC-Q1 (10% hysteresis) |
1.074 | ||||||
V(SENSEx) falling | –1% | 1% | |||||
I(SENSEx) | Input current | V(SENSEx) = 0 V or VDD | –15 | 15 | nA | ||
VOL | Low-level output voltage | VDD ≥ 1.5 V, ISINK = 0.4 mA | 0.25 | V | |||
VDD ≥ 2.7 V, ISINK = 2 mA | 0.25 | ||||||
VDD ≥ 4.5 V, ISINK = 3.2 mA | 0.30 | ||||||
VOH | High-level output voltage (TPS3779-Q1 only) |
VDD ≥ 1.5 V, ISOURCE = 0.4 mA | 0.8 VDD | V | |||
VDD ≥ 2.7 V, ISOURCE = 1 mA | 0.8 VDD | ||||||
VDD ≥ 4.5 V, ISOURCE = 2.5 mA | 0.8 VDD | ||||||
Ilkg(OD) | Open-drain output leakage current (TPS3780-Q1 only) | High impedance, V(SENSEx) = V(OUTx) = 5.5 V | –250 | 250 | nA |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
tPD(r) | SENSEx (rising) to OUTx propagation delay | 5.5 | µs | ||
tPD(f) | SENSEx (falling) to OUTx propagation delay | 10 | µs | ||
tSD | Startup delay(1) | 570 | µs |
SENSE1 = SENSE2 = 1.5 V |
VDD = 5.5 V |
SENSE1 = SENSE2 = 1.3 V to 0 V |
High-to-low transition occurs above the curve |
Low-to-high transition occurs above the curve |
VDD = 5.5 V |
SENSE1 = SENSE2 = 0 V to 1.3 V |
High-to-low transition occurs above the curve |
Low-to-high transition occurs above the curve |