SBVS430B April   2023  – December 2023 TPS3808E-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Voltage Thresholds
  6. 5 Pin Configuration and Functions
  7. 6 Specification
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Timing Diagram
  8. 7 Typical Characteristics
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 SENSE Input
      2. 8.3.2 Selecting the RESET Delay Time
      3. 8.3.3 Manual RESET (MR) Input
      4. 8.3.4 RESET Output
    4. 8.4 Device Functional Modes
      1. 8.4.1 Normal Operation (VDD > VDD(min))
      2. 8.4.2 Above Power-On Reset but Less Than VDD(min) (VPOR < VDD < VDD(min))
      3. 8.4.3 Below Power-On Reset (VDD < VPOR)
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Immunity to SENSE Pin Voltage Transients
      3. 9.2.3 Application Curve
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 Development Support
        1. 10.1.1.1 Evaluation Modules
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 Receiving Notification of Documentation Updates
    4. 10.4 Support Resources
    5. 10.5 Trademarks
    6. 10.6 Electrostatic Discharge Caution
    7. 10.7 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.4 Thermal Information

THERMAL METRIC(1) TPS3808E-Q1 UNIT
DBV (SOT23-6)
6 PINS
RθJA Junction-to-ambient thermal resistance 210.8 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 131.5 °C/W
RθJB Junction-to-board thermal resistance 91.7 °C/W
ΨJT Junction-to-top characterization parameter 67.6 °C/W
ΨJB Junction-to-board characterization parameter 91.3 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.