SLVSEK4C July   2019  – February 2020 TPS63810 , TPS63811

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Schematic
      2.      Efficiency versus Output Current
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     BGA Package (YFF) Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Switching Characteristics
    8. 7.8 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Control Scheme
        1. 8.3.1.1 Buck Operation
        2. 8.3.1.2 Boost Operation
        3. 8.3.1.3 Buck-Boost Operation
      2. 8.3.2  Control Scheme
      3. 8.3.3  Power-Save Mode Operation (PSM)
      4. 8.3.4  Forced-PWM Operation (FPWM)
      5. 8.3.5  Ramp-PWM Operation (RPWM)
      6. 8.3.6  Device Enable (EN)
      7. 8.3.7  Undervoltage Lockout (UVLO)
      8. 8.3.8  Soft Start
      9. 8.3.9  Output Voltage Control
        1. 8.3.9.1 Dynamic Voltage Scaling
      10. 8.3.10 Protection Functions
        1. 8.3.10.1 Input Voltage Protection (IVP)
        2. 8.3.10.2 Current Limit Mode and Overcurrent Protection
        3. 8.3.10.3 Thermal Shutdown
      11. 8.3.11 Power Good
      12. 8.3.12 Load Disconnect
      13. 8.3.13 Output Discharge
    4. 8.4 Device Functional Modes
    5. 8.5 Programming
      1. 8.5.1 Serial Interface Description
      2. 8.5.2 Standard-, Fast-, and Fast-Mode Plus Protocol
      3. 8.5.3 I2C Update Sequence
    6. 8.6 Register Map
      1. 8.6.1 Register Description
        1. 8.6.1.1 Register Map
        2. 8.6.1.2 Register CONTROL (Slave address: 0b1110101; Register address: 0x01; Default: 0x00 or 0x20)
          1. Table 3. Register CONTROL Field Descriptions
        3. 8.6.1.3 Register STATUS (Slave address: 0b1110101; Register address: 0x02; Default: 0x00)
          1. Table 4. Register STATUS Field Descriptions
        4. 8.6.1.4 Register DEVID (Slave address: 0b1110101; Register address: 0x03; Default: 0x04)
          1. Table 5. Register DEVID Field Descriptions
        5. 8.6.1.5 Register VOUT1 (Slave address: 0b1110101; Register address: 0x04; Default: 0x3C)
          1. Table 6. Register VOUT1 Field Descriptions
        6. 8.6.1.6 Register VOUT2 (Slave address: 0b1110101; Register address: 0x05; Default: 0x42)
          1. Table 7. Register VOUT2 Field Descriptions
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 1.8-V to 5.2-V Output Smartphone Power Supply
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Input Capacitor Selection
          2. 9.2.1.2.2 Inductor Selection
          3. 9.2.1.2.3 Output Capacitor Selection
          4. 9.2.1.2.4 I2C Pullup Resistor Selection
        3. 9.2.1.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Third-Party Products Disclaimer
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Related Links
    4. 12.4 Receiving Notification of Documentation Updates
    5. 12.5 Support Resources
    6. 12.6 Trademarks
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

9.2.1.2.2 Inductor Selection

TI recommends you use the TPS63810 device with 0.47-µH inductors. For high efficiencies, use an inductor with a low DC resistance (DCR) and low core losses.

The saturation current of the inductor must be greater than the maximum inductor current in your application. To include sufficient margin for worst-case and transient operating conditions, TI recommends you use an inductor with saturation current that is at least 20% higher than the maximum inductor current in your application. The maximum current in the inductor occurs when the device operates in boost mode and the following is true:

  • The input voltage is at its minimum value.
  • The output voltage is at its maximum value.
  • The output current is at its maximum value.

To calculate the maximum inductor current, first use Equation 1 to calculate the maximum duty cycle during boost operation (which is when the maximum inductor current occurs).

WHITESPACE

Equation 1. TPS63810 TPS63811 eq-01-slvsek4.gif

where

  • D is the duty cycle
  • VI is the input voltage
  • VO is the output voltage

WHITESPACE

TPS63810 TPS63811 eq-07-slvsek4.gif

WHITESPACE

Next, use Equation 2 to calculate the maximum inductor current.

Equation 2. TPS63810 TPS63811 eq-02-slvsek4.gif

where

  • ILM is the peak inductor current
  • IO is the output current
  • η is the converter efficiency (use the value from the application curves or assume 90%)
  • D is the duty cycle (calculated with Equation 1)
  • VI is the input voltage
  • f is the switching frequency (assume 2 MHz)
  • L is the inductance (use 0.47 µH)

WHITESPACE

TPS63810 TPS63811 eq-08-slvsek4.gif

WHITESPACE

To include enough margin for transient conditions, TI recommends you use an inductor with a saturation current rating at least 20% higher than the calculated maximum current. In this example, TI recommends an inductor with a saturation current of at least 6.1 A.