SBVS343A March   2019  – September 2019 TPS7A78

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
    1.     Device Images
      1.      Typical Schematic Half-Bridge Configuration
      2.      Typical Schematic Full-Bridge Configuration
  4. Revision History
  5. Pin Configuration and Functions
    1.     Pin Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Active Bridge Control
      2. 7.3.2 Full-Bridge (FB) and Half-Bridge (HB) Configurations
      3. 7.3.3 4:1 Switched-Capacitor Voltage Reduction
      4. 7.3.4 Undervoltage Lockout Circuits (VUVLO_SCIN) and (VUVLO_LDO_IN)
      5. 7.3.5 Dropout Voltage Regulation
      6. 7.3.6 Current Limit
      7. 7.3.7 Programmable Power-Fail Detection
      8. 7.3.8 Power-Good (PG) Detection
      9. 7.3.9 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Normal Operation
      2. 7.4.2 Dropout Mode
      3. 7.4.3 Disabled Mode
  8. Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Recommended Capacitor Types
      2. 8.1.2 Input and Output Capacitors Requirements
      3. 8.1.3 Startup Behavior
      4. 8.1.4 Load Transient
      5. 8.1.5 Standby Power and Output Efficiency
      6. 8.1.6 Reverse Current
      7. 8.1.7 Switched-Capacitor Stage Output Impedance
      8. 8.1.8 Power Dissipation (PD)
      9. 8.1.9 Estimating Junction Temperature
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Calculating the Cap-Drop Capacitor CS
          1. 8.2.2.1.1 CS Calculations for the Typical Design
        2. 8.2.2.2 Calculating the Surge Resistor RS
          1. 8.2.2.2.1 RS Calculations for the Typical Design
        3. 8.2.2.3 Checking for the Device Maximum ISHUNT Current
          1. 8.2.2.3.1 ISHUNT Calculations for the Typical Design
        4. 8.2.2.4 Calculating the Bulk Capacitor CSCIN
          1. 8.2.2.4.1 CSCIN Calculations for the Typical Design
        5. 8.2.2.5 Calculating the PFD Pin Resistor Dividers for a Power-Fail Detection
          1. 8.2.2.5.1 PFD Pin Resistor Divider Calculations for the Typical Design
        6. 8.2.2.6 Summary of the Typical Application Design Components
      3. 8.2.3 Application Curves
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Development Support
        1. 11.1.1.1 Evaluation Module
        2. 11.1.1.2 SIMPLIS Model
      2. 11.1.2 Device Nomenclature
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Community Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

CS Calculations for the Typical Design

Equation 8 yields a capacitance value of 153 nF, as given by Equation 9, which results from the VAC (MIN) voltage and frequency of this application. This value is for the FB configuration. For the HB configuration, doubling the calculated capacitance value yields 306 nF, and approximate this value up to the nearest standard capacitor value, which yields a CS value of 330 nF.

Equation 9. CS = (0.012 ) / (16 × 47 × [√2 × 85 – 4(3.3 + 0.6)]) = 153 n F

As mentioned in the Calculating the Cap-Drop Capacitor CS and Input and Output Capacitors Requirements sections, capacitance loss under long-term service is inevitable and must be considered in the design. Follow the manufacturer recommendations and guidelines for capacitor derating and degradation over time.