SLVSGM1A July   2023  – December 2023 TPSM828301 , TPSM828302 , TPSM828303

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Options
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information Module
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Pulse Width Modulation (PWM) Operation
      2. 7.3.2 Power Save Mode (PSM) Operation
      3. 7.3.3 Start-Up and Soft Start
      4. 7.3.4 Switch Cycle-by-Cycle Current Limit
      5. 7.3.5 Undervoltage Lockout
      6. 7.3.6 Thermal Shutdown
      7. 7.3.7 Optimized EMI Performance
    4. 7.4 Device Functional Modes
      1. 7.4.1 Enable, Disable, and Output Discharge
      2. 7.4.2 Minimum Duty Cycle and 100% Mode Operation
      3. 7.4.3 Power Good
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Setting The Output Voltage
        2. 8.2.2.2 Input Capacitor Selection
        3. 8.2.2.3 Output Capacitor Selection
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
        1. 8.4.2.1 Thermal Considerations
  10. 9 Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Third-Party Products Disclaimer
    2. 9.2 Documentation Support
      1. 9.2.1 Related Documentation
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.3.7 Optimized EMI Performance

TPSM82830x devices incorporate advanced techniques to minimize Electromagnetic Interference (EMI) and makes complying with stringent EMI standards simple. By integrating capacitors directly onto the silicon, parasitic elements are reduced and loop area is minimized, effectively reducing high-frequency noise emissions primarily above 450 MHz. The on-chip capacitors make sure low-inductance paths for high-frequency AC switching current and damping voltage ringing.

Additionally to the on-chip capacitors, the gate driver has been improved with advanced slew rate control mechanisms and by smoothing the supply voltage. The switch node voltage is controlled in a way to reduce sharp edges and minimize voltage overshoot, consequently diminishing EMI.

GUID-20231107-SS0I-3KMV-642D-M7N67R1JDCXV-low.svg
The above plot is measured on the EVM with the TPSM828303ARDSR and standard BOM.
IOUT = 3 A VIN = 5.5 V VOUT = 1.8 V
Figure 7-6 Radiated EMI Performance (CISPR11 Radiated Emission Test with Class A and Class B Limits)