SCDS361A October   2014  – July 2016 TS5A22364-Q1

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics—2.5-V Supply
    6. 6.6 Electrical Characteristics—3.3-V Supply
    7. 6.7 Electrical Characteristics—5-V Supply
    8. 6.8 Typical Characteristics
  7. Parameter Measurement Information
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Click-and-Pop Reduction
    4. 8.4 Device Functional Modes
  9. Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Negative Signal Swing Capability
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Receiving Notification of Documentation Updates
    2. 12.2 Community Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1) (2)
MIN MAX UNIT
VCC Supply voltage(3) –0.5 6 V
VNC Analog voltage on NC1-NC2 pin(3) (4) (5) VCC – 6 VCC + 0.5 V
VNO Analog voltage on NO1-NO2 pin(3) (4) (5)
VCOM Analog voltage on COM1-COM2 pin(3) (4) (5)
II/OK Analog port diode input clamp current VNC, VNO, VCOM < 0
or
VNC, VNO, VCOM > VCC
–50 50 mA
INC
INO
ICOM
On-state switch continuous current VNC, VNO, VCOM = 0 to VCC –150 150 mA
On-state switch peak current(6) –300 300
IRSH Off-state switch shunt resistor current –20 20 mA
VIN Digital input voltage –0.5 6.5 V
IIK Digital input clamp current(3) (4) VIN < 0 –50 50 mA
ICC
IGND
Continuous current through VCC or GND –100 100 mA
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
(3) All voltages are with respect to ground, unless otherwise specified.
(4) The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
(5) This value is limited to 5.5 V maximum.
(6) Pulse at 1-ms duration <10% duty cycle.

6.2 ESD Ratings

MIN MAX UNIT
VESD Electrostatic discharge Human body model (HBM), per AEC Q100-002(1) –2500 2500 V
Charged device model (CDM), per AEC Q100-011 all pins –1500 1500
(1) AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VCC Supply voltage 2.3 5.5 V
VNC Signal path voltage VCC – 5.5 VCC V
VNO
VCOM
VIN Digital control GND VCC V

6.4 Thermal Information

THERMAL METRIC(1) (2) TS5A22364-Q1 UNIT
DGS (VSSOP)
10 PINS
RθJA Junction-to-ambient thermal resistance 163.3 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 56.4 °C/W
RθJB Junction-to-board thermal resistance 83.1 °C/W
ψJT Junction-to-top characterization parameter 6.8 °C/W
ψJB Junction-to-board characterization parameter 81.8 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.
(2) The package thermal impedance is calculated in accordance with JESD 51-7.

6.5 Electrical Characteristics—2.5-V Supply

VCC = 2.3 V to 2.7 V, TA = –40°C to +125°C (unless otherwise noted) (1)
PARAMETER TEST CONDITIONS TA VCC MIN TYP MAX UNIT
ANALOG SWITCH
Analog signal VCOM
VNO
VNC
VCC – 5.5 VCC V
On-state
resistance
Ron VNC or VNO = VCC, 1.5 V,
VCC – 5.5 V
ICOM = –100 mA
COM to NO or NC,
See Figure 14
25°C 2.7 V 0.65 0.94 Ω
–40°C to +125°C 1.3
On-state
resistance match
between channels
ΔRon VNC or VNO = 1.5 V,
ICOM = –100 mA
COM to NO or NC,
See Figure 14
25°C 2.7 V 0.023 0.11 Ω
–40°C to +125°C 0.15
On-state
resistance
flatness
Ron(flat) VNC or VNO = VCC, 1.5 V,
VCC – 5.5 V
ICOM = –100 mA
COM to NO or NC,
See Figure 14
25°C 2.7 V 0.18 0.46 Ω
–40°C to +125°C 0.56
Shunt switch resistance RSH INO or INC = 10 mA –40°C to +125°C 2.7 V 25 55 Ω
On-state leakage
current
ICOM(ON) VNC and VNO = floating,
VCOM = VCC , VCC – 5.5 V
See Figure 16 25°C 2.7 V –200 200 nA
–40°C to +125°C –2500 2500
DIGITAL CONTROL INPUTS (IN)(2)
Input logic high VIH –40°C to +125°C 1.4 VCC V
Input logic low VIL –40°C to +125°C 0.4 V
Input leakage current IIH, IIL VIN = VCC or 0 25°C 2.7 V –250 250 nA
–40°C to +125°C –250 250
DYNAMIC
Turnon time tON VCOM = VCC,
RL = 300 Ω
CL = 35 pF,
See Figure 18
25°C 2.5 V 44 80 ns
–40°C to +125°C 2.3 V to 2.7 V 120
Turnoff time tOFF VCOM = VCC,
RL = 300 Ω
CL = 35 pF,
See Figure 18
25°C 2.5 V 22 70 ns
–40°C to +125°C 2.3 V to 2.7 V 70
Break-before-make time tBBM See Figure 19 25°C 2.5 V 1 7 ns
Charge injection QC VGEN = 0,
RGEN = 0,
CL = 1 nF,
See Figure 23
25°C 2.5 V 215 pC
On-State
NC, NO, COM
capacitance
CCOM(ON) VCOM = VCC or GND,
Switch ON, f = 10 MHz
See Figure 17 25°C 2.5 V 370 pF
Digital input capacitance CI VIN = VCC or GND See Figure 17 25°C 2.5 V 2.6 pF
Bandwidth BW RL = 50 Ω, –3 dB See Figure 20 25°C 2.5 V 17 MHz
Off-state isolation OISO RL = 50 Ω f = 100 kHz,
See Figure 21
25°C 2.5 V –66 dB
Crosstalk XTALK RL = 50 Ω f = 100 kHz,
See Figure 22
25°C 2.5 V –75 dB
Total harmonic distortion THD RL = 600 Ω,
CL = 35 pF
f = 20 Hz to
20 kHz,
See Figure 24
25°C 2.5 V 0.01 %
SUPPLY
Positive
supply current
ICC VCOM and VIN = VCC or GND, VNC and VNO = floating 25°C 2.7 V 0.2 1.1 μA
–40°C to +125°C 1.3
VCOM = VCC – 5.5 V, VIN = VCC or GND, VNC and VNO = floating –40°C to +125°C 2.7 V 3.3 μA
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
(2) All unused digital inputs of the device must be held at VCC or GND to ensure proper device operation. See the Implications of Slow or Floating CMOS Inputs application report, SCBA004.

6.6 Electrical Characteristics—3.3-V Supply

VCC = 3 V to 3.6 V, TA = –40°C to +125°C (unless otherwise noted) (1)
PARAMETER TEST CONDITIONS TA VCC MIN TYP MAX UNIT
ANALOG SWITCH
Analog signal VCOM
VNO
VNC
VCC – 5.5 VCC V
On-state
resistance
Ron VNC or VNO ≤ VCC,
1.5 V,
VCC – 5.5 V,
ICOM = –100 mA
COM to NO or NC,
See Figure 14
25°C 3 V 0.61 0.87 Ω
–40°C to +125°C 0.97
On-state
resistance match
between channels
ΔRon VNC or VNO = 1.5 V,
ICOM = –100 mA
COM to NO or NC,
See Figure 14
25°C 3 V 0.024 0.13 Ω
–40°C to +125°C 0.13
On-state
resistance
flatness
Ron(flat) VNC or VNO ≤ VCC,
1.5 V,
VCC – 5.5 V,
ICOM = –100 mA
COM to NO or NC,
See Figure 14
25°C 3 V 0.12 0.46 Ω
–40°C to +125°C 0.5
Shunt switch resistance RSH INO or
INC = 10 mA
–40°C to +125°C 3 V 25 40 Ω
On-state leakage
current
ICOM(ON) VNC and VNO = floating,
VCOM = VCC,VCC – 5.5 V
COM to NO or NC,
See Figure 16
25°C 3.6 V –200 200 nA
–40°C to +125°C –2500 2500
DIGITAL CONTROL INPUTS (IN)(2)
Input logic high VIH –40°C to +125°C 1.4 VCC V
Input logic low VIL –40°C to +125°C 0.6 V
Input leakage current IIH, IIL VIN = VCC or 0 25°C 3.6 V –250 250 nA
–40°C to +125°C –250 250
DYNAMIC
Turnon time tON VCOM = VCC,
RL = 300 Ω
CL = 35 pF,
See Figure 18
25°C 3.3 V 34 80 ns
–40°C to +125°C 3 V to 3.6 V 80
Turnoff time tOFF VCOM = VCC,
RL = 300 Ω
CL = 35 pF,
See Figure 18
25°C 3.3 V 19 70 ns
–40°C to +125°C 3 V to 3.6 V 70
Break-before-make time tBBM See Figure 19 25°C 3.3 V 1 7 ns
Charge injection QC VGEN = 0,
RGEN = 0,
CL = 1 nF,
See Figure 23
25°C 3.3 V 300 pC
On-State
NC, NO, COM
capacitance
CCOM(ON) VCOM = VCC or GND,
f = 10 MHz
See Figure 17 25°C 3.3 V 370 pF
Digital input capacitance CI VIN = VCC or GND See Figure 17 25°C 3.3 V 2.6 pF
Bandwidth BW RL = 50 Ω, –3 dB Switch ON,
See Figure 20
25°C 3.3 V 17.5 MHz
Off-state isolation OISO RL = 50 Ω f = 100 kHz,
See Figure 21
25°C 3.3 V –68 dB
Crosstalk XTALK RL = 50 Ω f = 100 kHz,
See Figure 22
25°C 3.3 V –76 dB
Total harmonic distortion THD RL = 600 Ω,
CL = 35 pF
f = 20 Hz to 20 kHz,
See Figure 24
25°C 3.3 V 0.008 %
SUPPLY
Positive
supply current
ICC VCOM and VIN = VCC or GND, VNC and VNO = floating 25°C 3.6 V 0.1 1.2 μA
–40°C to +125°C 1.3
VCOM = VCC – 5.5 V, VIN = VCC or GND, VNC and VNO = floating –40°C to +125°C 3.6 V 3.4 μA
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
(2) All unused digital inputs of the device must be held at VCC or GND to ensure proper device operation. See the Implications of Slow or Floating CMOS Inputs application report, SCBA004.

6.7 Electrical Characteristics—5-V Supply(1)

VCC = 4.5 V to 5.5 V, TA = –40°C to +125°C (unless otherwise noted)
PARAMETER TEST CONDITIONS TA VCC MIN TYP MAX UNIT
ANALOG SWITCH
Analog signal VCOM,
VNO, VNC
VCC – 5.5 VCC V
On-state
resistance
Ron VNC or VNO = VCC, 1.6 V,
VCC = –5.5 V,
ICOM = –100 mA
COM to NO or NC,
See Figure 14
25°C 4.5 V 0.52 0.74 Ω
–40°C to +125°C 0.83
On-state
resistance match
between channels
ΔRon VNC or VNO = 1.6 V,
ICOM = –100 mA
COM to NO or NC,
See Figure 14
25°C 4.5 V 0.04 0.23 Ω
–40°C to +125°C 0.30
On-state
resistance
flatness
Ron(flat) VNC or VNO = VCC, 1.6 V,
VCC = –5.5 V,
ICOM = –100 mA
COM to NO or NC,
See Figure 14
25°C 4.5 V 0.076 0.46 Ω
–40°C to +125°C 0.5
Shunt switch resistance RSH INO or INC = 10 mA –40°C to +125°C 4.5 V 16 36 Ω
On-state leakage
current
ICOM(ON) VNC and VNO = Floating,
VCOM = VCC, VCC – 5.5 V
See Figure 16 25°C 5.5 V –200 200 nA
–40°C to +125°C –2500 2500
DIGITAL CONTROL INPUTS (IN)(2)
Input logic high VIH –40°C to +125°C 2.4 VCC V
Input logic low VIL –40°C to +125°C 0.8 V
Input leakage current IIH, IIL VIN = VCC or 0 25°C 5.5 V –250 250 nA
–40°C to +125°C –250 250
DYNAMIC
Turnon time tON VCOM = VCC,
RL = 300 Ω
CL = 35 pF,
See Figure 18
25°C 5 V 27 80 ns
–40°C to +125°C 4.5 V to 5.5 V 80
Turnoff time tOFF VCOM = VCC,
RL = 300 Ω
CL = 35 pF,
See Figure 18
25°C 5 V 13 70 ns
–40°C to +125°C 4.5 V to 5.5 V 70
Break-before-make time tBBM VNC = VNO = VCC/2
RL = 300 Ω
C = 35 pF,
See Figure 19
25°C 5 V 1 3.5 ns
Charge injection QC VGEN = 0,
RGEN = 0
CL = 1L nF,
See Figure 23
25°C 5 V 500 pC
ON-State
NC, NO, COM
capacitance
CCOM(ON) VCOM = VCC or GND See Figure 17 25°C 5 V 370 pF
Digital input capacitance CI VIN = VCC or GND See Figure 17 25°C 5 V 2.6 pF
Bandwidth BW RL = 50 Ω See Figure 20 25°C 5 V 18.3 MHz
Off-state isolation OISO RL = 50 Ω f = 100 kHz,
See Figure 21
25°C 5 V –70 dB
Crosstalk XTALK RL = 50 Ω f = 100 kHz,
See Figure 22
25°C 5 V –78 dB
Total harmonic distortion THD RL = 600 Ω,
CL = 35 pF
f = 20 Hz to 20 kHz,
See Figure 24
25°C 5 V 0.009 %
SUPPLY
Positive
supply current
ICC VCOM and VIN = VCC or GND, VNC or VNO = floating 25°C 5.5 V 0.2 1.3 μA
–40°C to +125°C 3.5
VCOM = VCC – 5.5 V, VIN = VCC or GND, VNC or VNO = floating –40°C to +125°C 5
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
(2) All unused digital inputs of the device must be held at VCC or GND to ensure proper device operation. See the Implications of Slow or Floating CMOS Inputs application report, SCBA004.

6.8 Typical Characteristics

TS5A22364-Q1 D001_SCDS361.gif
Figure 1. On-Resistance vs Voltage VCOM
TS5A22364-Q1 D003_SCDS361.gif
Figure 3. On-Resistance vs Voltage VCOM (VCC = 3 V)
TS5A22364-Q1 D005_SCDS361.gif
Figure 5. Insertion Loss vs Frequency for Varying VCC
TS5A22364-Q1 D007_SCDS361.gif
Figure 7. Off Isolation vs Frequency for Varying VCC
TS5A22364-Q1 D009_scds361.gif
Figure 9. Crosstalk vs Frequency for Varying VCC
TS5A22364-Q1 D011_scds361.gif
Figure 11. Charge Injection vs Voltage VCOM
TS5A22364-Q1 D013_SCDS361.gif
T = 25°C VNC and VNO = Floating VCOM and VIN = GND
Figure 13. Power-Supply Current vs Voltage
TS5A22364-Q1 D002_SCDS361.gif
Figure 2. On-Resistance vs Voltage VCOM (VCC = 2.3 V)
TS5A22364-Q1 D004_SCDS361.gif
Figure 4. On-Resistance vs Voltage VCOM (VCC = 4.5 V)
TS5A22364-Q1 D006_SCDS361.gif
Figure 6. Insertion Loss vs Frequency for Varying Temperature
TS5A22364-Q1 D008_SCDS361.gif
Figure 8. Off Isolation vs Frequency for Varying Temperature
TS5A22364-Q1 D010_scds361.gif
Figure 10. Crosstalk vs Frequency (VCC = 3.3 V)
TS5A22364-Q1 D012_SCDS361.gif
Figure 12. Total Harmonic Distortion vs Frequency