SLUSDA5B February   2018  – April 2024 UCC21222-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings (Automotive)
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Power Ratings
    6. 5.6  Insulation Specifications
    7. 5.7  Safety Limiting Values
    8. 5.8  Electrical Characteristics
    9. 5.9  Switching Characteristics
    10. 5.10 Insulation Characteristics Curves
    11. 5.11 Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1 Minimum Pulses
    2. 6.2 Propagation Delay and Pulse Width Distortion
    3. 6.3 Rising and Falling Time
    4. 6.4 Input and Disable Response Time
    5. 6.5 Programmable Dead Time
    6. 6.6 Power-Up UVLO Delay to OUTPUT
    7. 6.7 CMTI Testing
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 VDD, VCCI, and Undervoltage Lock Out (UVLO)
      2. 7.3.2 Input and Output Logic Table
      3. 7.3.3 Input Stage
      4. 7.3.4 Output Stage
      5. 7.3.5 Diode Structure in the UCC21222-Q1
    4. 7.4 Device Functional Modes
      1. 7.4.1 Disable Pin
      2. 7.4.2 Programmable Dead Time (DT) Pin
        1. 7.4.2.1 DT Pin Tied to VCCI or DT Pin Left Open
        2. 7.4.2.2 Connecting a Programming Resistor between DT and GND Pins
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Custom Design With WEBENCH® Tools
        2. 8.2.2.2 Designing INA/INB Input Filter
        3. 8.2.2.3 Select Dead Time Resistor and Capacitor
        4. 8.2.2.4 Select External Bootstrap Diode and its Series Resistor
        5. 8.2.2.5 Gate Driver Output Resistor
        6. 8.2.2.6 Estimating Gate Driver Power Loss
        7. 8.2.2.7 Estimating Junction Temperature
        8. 8.2.2.8 Selecting VCCI, VDDA/B Capacitor
          1. 8.2.2.8.1 Selecting a VCCI Capacitor
          2. 8.2.2.8.2 Selecting a VDDA (Bootstrap) Capacitor
          3. 8.2.2.8.3 Select a VDDB Capacitor
        9. 8.2.2.9 Application Circuits with Output Stage Negative Bias
      3. 8.2.3 Application Curves
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Component Placement Considerations
      2. 10.1.2 Grounding Considerations
      3. 10.1.3 High-Voltage Considerations
      4. 10.1.4 Thermal Considerations
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
      2. 11.1.2 Development Support
        1. 11.1.2.1 Custom Design With WEBENCH® Tools
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Support Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information
8.2.2.8.2 Selecting a VDDA (Bootstrap) Capacitor

A VDDA capacitor, also referred to as a bootstrap capacitor in bootstrap power supply configurations, allows for gate drive current transients up to 6 A, and needs to maintain a stable gate drive voltage for the power transistor.

The total charge needed per switching cycle can be estimated with

Equation 19. GUID-D13DBE2F-D243-4483-8D36-870F7F27D64A-low.gif

where

  • QG: Gate charge of the power transistor.
  • IVDD: The channel self-current consumption with no load at 100kHz.

Therefore, the absolute minimum CBoot requirement is:

Equation 20. GUID-8B47FED1-4ABA-4FFB-B574-61477070DD0C-low.gif

where

  • ΔVVDDA is the voltage ripple at VDDA, which is 0.5 V in this example.

In practice, the value of CBoot is greater than the calculated value. This allows for the capacitance shift caused by the DC bias voltage and for situations where the power stage would otherwise skip pulses due to load transients. Therefore, it is recommended to include a safety-related margin in the CBoot value and place it as close to the VDD and VSS pins as possible. A 50-V 1-µF capacitor is chosen in this example.

Equation 21. GUID-A9F97E2F-B912-4957-BE88-8AAB75EEB36F-low.gif

To further lower the AC impedance for a wide frequency range, it is recommended to have bypass capacitor with a low capacitance value, in this example a 100 nF, in parallel with CBoot to optimize the transient performance.

Note:

Too large CBOOT is not good. CBOOT may not be charged within the first few cycles and VBOOT could stay below UVLO. As a result, the high-side FET does not follow input signal command. Also during initial CBOOT charging cycles, the bootstrap diode has highest reverse recovery current and losses.