SLPS481C December   2013  – May 2024 CSD19506KCS

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 Third-Party Products Disclaimer
    2. 5.2 Receiving Notification of Documentation Updates
    3. 5.3 Support Resources
    4. 5.4 Trademarks
    5. 5.5 Electrostatic Discharge Caution
    6. 5.6 Glossary
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

パッケージ・オプション

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メカニカル・データ（パッケージ｜ピン）
  • KCS|3
サーマルパッド・メカニカル・データ
発注情報

4.3 Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)

CSD19506KCS Transient Thermal Impedance
Figure 4-1 Transient Thermal Impedance
CSD19506KCS Saturation Characteristics
Figure 4-2 Saturation Characteristics
CSD19506KCS Transfer Characteristics
Figure 4-3 Transfer Characteristics
CSD19506KCS Gate Charge
Figure 4-4 Gate Charge
CSD19506KCS Threshold Voltage vs Temperature
Figure 4-6 Threshold Voltage vs Temperature
CSD19506KCS Normalized On-State Resistance vs Temperature
Figure 4-8 Normalized On-State Resistance vs Temperature
CSD19506KCS Maximum Safe Operating Area
Figure 4-10 Maximum Safe Operating Area
CSD19506KCS Maximum Drain Current vs Temperature
Figure 4-12 Maximum Drain Current vs Temperature
CSD19506KCS Capacitance
Figure 4-5 Capacitance
CSD19506KCS On-State Resistance vs Gate-To-Source Voltage
Figure 4-7 On-State Resistance vs Gate-To-Source Voltage
CSD19506KCS Typical Diode Forward Voltage
Figure 4-9 Typical Diode Forward Voltage
CSD19506KCS Single Pulse Unclamped Inductive Switching
Figure 4-11 Single Pulse Unclamped Inductive Switching