JAJSNB4 February   2022 DLP5531A-Q1

PRODUCTION DATA  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  Storage Conditions
    3. 6.3  ESD Ratings
    4. 6.4  Recommended Operating Conditions
    5.     11
    6. 6.5  Thermal Information
    7. 6.6  Electrical Characteristics
    8. 6.7  Timing Requirements
    9.     15
    10. 6.8  Switching Characteristics
    11.     17
    12. 6.9  System Mounting Interface Loads
    13.     19
    14. 6.10 Physical Characteristics of the Micromirror Array
    15.     21
    16. 6.11 Micromirror Array Optical Characteristics
    17. 6.12 Window Characteristics
    18. 6.13 Chipset Component Usage Specification
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Sub-LVDS Data Interface
      2. 7.3.2 Low Speed Interface for Control
      3. 7.3.3 DMD Voltage Supplies
      4. 7.3.4 Asynchronous Reset
      5. 7.3.5 Temperature Sensing Diode
        1. 7.3.5.1 Temperature Sense Diode Theory
    4. 7.4 System Optical Considerations
      1. 7.4.1 Numerical Aperture and Stray Light Control
      2. 7.4.2 Pupil Match
      3. 7.4.3 Illumination Overfill
    5. 7.5 DMD Image Performance Specification
    6. 7.6 Micromirror Array Temperature Calculation
      1. 7.6.1 Temperature Rise Through the Package for Heatsink Design
      2. 7.6.2 Monitoring Array Temperature Using the Temperature Sense Diode
    7. 7.7 Micromirror Landed-On/Landed-Off Duty Cycle
      1. 7.7.1 Definition of Micromirror Landed-On/Landed-Off Duty Cycle
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Application Overview
      2. 8.2.2 Reference Design
      3. 8.2.3 Application Mission Profile Consideration
  9. 9 Power Supply Recommendations
    1. 9.1 Power Supply Power-Up Procedure
    2. 9.2 Power Supply Power-Down Procedure
    3. 9.3 Power Supply Sequencing Requirements
  10. 10Layout
    1. 10.1 Layout Guidelines
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Device Nomenclature
      2. 11.1.2 Device Markings
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 サポート・リソース
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 DMD Handling
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

7.3.5.1 Temperature Sense Diode Theory

A temperature sensing diode is based on the fundamental current and temperature characteristics of a transistor. The diode is formed by connecting the transistor base to the collector. Three different known currents flow through the diode and the resulting diode voltage is measured in each case. The difference in their base–emitter voltages is proportional to the absolute temperature of the transistor.

Refer to the TMP411-Q1 data sheet for detailed information about temperature diode theory and measurement. Figure 7-2 and Figure 7-3 illustrate the relationships between the current and voltage through the diode.

GUID-5AD1986D-160D-44BC-969A-79855D28D54C-low.gifFigure 7-2 Temperature Measurement Theory
GUID-988CC6A1-FD52-497A-A1E1-70CA3A320833-low.gifFigure 7-3 Example of Delta VBE Versus Temperature